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Silicon and beyond : advanced device models and circuit simulators /
The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and im...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore ; River Edge, N.J. :
World Scientific,
©2000.
|
| Colección: | Selected topics in electronics and systems ;
vol. 15. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 245 | 0 | 0 | |a Silicon and beyond : |b advanced device models and circuit simulators / |c editors, Michael S. Shur, Tor A. Fjeldly. |
| 260 | |a Singapore ; |a River Edge, N.J. : |b World Scientific, |c ©2000. | ||
| 300 | |a 1 online resource (ix, 176 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Selected topics in electronics and systems ; |v vol. 15 | |
| 504 | |a Includes bibliographical references. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a PREFACE; CONTENTS; BSIM3V3 MOSFET MODEL; 1. Introduction; 2. I-V Model; 2.1. Vth model; 2.2. Bulk charge model; 2.3. Polysilicon gate depletion; 2.4. Single-equation channel charge model; 2.5. Mobility model; 2.6. Continuous linear current Ids0; 2.7. Saturation voltage; 2.8. Saturation drain current model; 2.9. Single-equation drain current formulation; 2.10. Substrate current model; 3. C-V Model -- The Charge Thickness Model; 3.1. Accumulation region; 3.2. Depletion region; 3.3. Inversion region; 3.4. Channel charge partitioning and derivation of capacitance; 4. Non-Quasi Static Model. | |
| 505 | 8 | |a 5. Junction Diode Model5.1. I-V model; 5.2. C-V model; 6. Temperature Effect; 7. Model Verification and Performance; 7.1. Parameter extraction; 7.2. DC test results; 7.3. C-V test results; 7.4. NQS model evaluation; 7.5. Model performance evaluation; 8. Summary; References; THIN-FILM TRANSISTOR MODELING; 1. Introduction; 2. Poly-Si TFT Modeling; 3. a-Si TFT Modeling; 3.1. DC model; 3.2. Dynamic TFT model; 4. Organic Thin Film Transistor Modeling; 5. Summary; References; SPICE MODELING OF COMPOUND SEMICONDUCTOR DEVICES; 1. Introduction; 2. Unified FET Modeling; 2.1. Introduction. | |
| 505 | 8 | |a 2.2. I-V modeling2.3. C-V modeling; 3. Modeling of GaAs MESFETs; 3.1. Introduction to GaAs FET modeling; 3.2. Series resistances; 3.3. Mobility; 3.4. Gate leakage current; 3.5. Additional effects and limitations; 3.6. Temperature dependencies; 3.7. Model verification; 4. HFET Modeling; 4.1. Introduction; 4.2. Equivalent circuit and DC model; 4.3. Gate leakage model; 4.4. Temperature dependencies; 4.5. Capacitance-voltage model; 4.6. Modeling of frequency dispersion effects; 4.7. HFET model verification; 5. Modeling of Heterodimensional Devices; 5.1. Introduction; 5.2. 2-D MESFET. | |
| 505 | 8 | |a 5.3. Resonant tunneling diodes5.4. Resonant tunneling transistor; 5.5. 2-D MESFET/RTD logic element; 6. Wide-Bandgap Devices; 6.1. Models for wide bandgap semiconductors transistors; 7. Summary and Future Work; Acknowledgment; References; BEYOND SPICE, A REVIEW OF MODERN ANALOG CIRCUIT SIMULATION TECHNIQUES; 1. Introduction; 2. Circuit Simulation Techniques in the Time-Domain; 2.1. Introduction; 2.2. SPICE-type nonlinear simulation techniques revisited; 2.3. Beyond SPICE; 3. Circuit Simulation Techniques in the Frequency-Domain; 3.1. Introduction; 3.2. Harmonic balance method. | |
| 505 | 8 | |a 3.3. The evolution of harmonic balance techniques3.4. Modern RF and microwave simulators; 4. Summary; References; THE SUPERCOMPUTER TOOLKIT AND ITS APPLICATIONS; 1. Introduction; 2. Hardware Architecture; 2.1. The microprocessor; 2.2. The memory-CPU board; 2.3. The connection of processors via the high-speed communication system; 2.4. Host-Toolkit boards communication; 3. Software; 3.1. User point of view; 3.2. System software; 3.3. Translators, simulators and other software tools; 4. Applications; 4.1. Elastic-plastic flow simulation; 4.2. Weather prediction; 4.3. Circuit simulation. | |
| 520 | |a The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and improved device models needed for accurate device and circuit design. Another task is the development of new circuit-simulation tools to handle very large and complex circuits. This book addresses both these issues with up-to-date reviews written by leading experts in the field. The first three chapter. | ||
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 630 | 0 | 0 | |a SPICE (Computer file) |
| 630 | 0 | 7 | |a SPICE (Computer file) |2 fast |
| 650 | 0 | |a Metal oxide semiconductor field-effect transistors |x Computer simulation. | |
| 650 | 0 | |a Silicon-on-insulator technology |x Computer simulation. | |
| 650 | 6 | |a Transistors MOSFET |x Simulation par ordinateur. | |
| 650 | 6 | |a Silicium sur isolant |x Simulation par ordinateur. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a Metal oxide semiconductor field-effect transistors |x Computer simulation |2 fast | |
| 700 | 1 | |a Shur, Michael. | |
| 700 | 1 | |a Fjeldly, Tor A. | |
| 776 | 0 | 8 | |i Print version: |t Silicon and beyond. |d Singapore ; River Edge, N.J. : World Scientific, ©2000 |z 9810242808 |w (OCoLC)44656646 |
| 830 | 0 | |a Selected topics in electronics and systems ; |v vol. 15. | |
| 856 | 4 | 0 | |u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=514151 |z Texto completo |
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