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Ultra clean processing of semiconductor surfaces X : selected, peer reviewed papers from the 10th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), September 20-22, 2010, Ostend, Belgium /
The International Symposium on Ultra-Clean Processing of Semiconductor Surfaces (UCPSS) is a bi-annual conference which has been organized by IMEC since 1992. The scope of the symposium includes all issues related to contamination, cleaning and surface preparation in mainstream large-scale Integrate...
| Clasificación: | Libro Electrónico |
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| Autor Corporativo: | |
| Otros Autores: | , , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Durnten-Zurich, Switzerland :
TTP,
©2012.
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| Colección: | Diffusion and defect data. Solid state phenomena ;
v. 187. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Ultra Clean Processing of Semiconductor Surfaces X; Preface, Committees and Sponsors; Table of Contents; Keynote; Exploratory Materials and Devices to Advance CMOS beyond the Classical Si Roadmap; Chapter 1: FEOL Surface Chemistry, Etching and Passivation; Scanning Probe Microscopy Imaging before and after Atomic Layer Oxide Deposition on a Compound Semiconductor Surface; Web Adds; Optimized Post-CMP and Pre-Epi Cleans to Enable Smooth and High Quality Epitaxial Strained Ge Growth on SiGe Strain Relaxed Buffers; Cleaning and Surface Preparation for SiGe and Ge Channel Device
- S-Passivation of the Ge Gate Stack Using (NH4)2SWet Chemical Cleaning of InP and InGaAs; Achieving Ultra-Shallow Junctions in Future CMOS Devices by a Wet Processing Technique; Effect of Wet Cleanings on GST Surface: XPS Characterization; Study of the Etching Mechanism of Heavily Doped Si in HF; Study on Al2O3 Film in Anhydrous HF Vapor; Deposition Wet-Etching Deposition (DWD) Method for Polysilicon Gate Fill-In at Flash Memory; Poly-Silicon Wet Removal for Replacement Gate Integration Scheme: Impact of Process Parameters on the Removal Rate
- A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate SchemeChapter 2: FEOL: Cleaning- and Drying-Induced Defects: Charging, Collapse of Fragile High Aspect Ratio Structures; Static Charge Induced Damage during Lightly Doped Drain (LDD) by Single Wafer Cleaning Process; Surface Charging Induced Gate Oxide Degradation; Investigation of Wet Clean Induced Dielectric Surface Static Charge and its Impact on Gate Oxide Integrity; Effect of Drying Liquid on Stiction of High Aspect Ratio Structures
- Elucidation of an Isopropyl Alcohol (IPA) Adsorption Phenomenon on a Wafer Surface for Achieving an Ultra-Clean and IPA-Saving Drying Process in the Batch Cleaning SystemChapter 3: FEOL: Photo Resist Removal; Measurement of Adhesion Force of Resist to Wafer by Using SAICAS: Characteristics of Lift-Off of Resist by Steam-Water Mixed Spray; High Temperature SPM Process Study for Stripping of Implanted Photoresist; Study of Controlled Oxygen Diffusion Approaches for Advanced Photoresist Strip; Non-Oxidizing Solvent-Based Strip of Ion Implanted Photoresist
- All-Wet, Metal-Compatible High-Dose-Implanted Photoresist StripApplicable Solvent Photoresist Strip Process for High-K/Metal Gate; Study on Resist Removal Using Electrolyzed Sulfuric Acid Solution in Comparison with SPM; Using the Background Signal of a Light Scattering Tool for I/I Photo Resist Strip Optimization and Monitoring; Wafer Edge Bead Cleaning with Laser Radiation and Reactive Gas; Chapter 4: Mechanical Cleaning Forces: Metrology; Effects of Interfacial Strength and Dimension of Structures on Physical Cleaning Window