Cargando…
Gettering and defect engineering in semiconductor technology XIV : selected papers from the XIVth International Biannual Meeting on Gettering and Defect Engineering in Semiconductor [Technology], (GADEST2011) September 25-30, 2011, Loipersdorf (Fürstenfeld), Austria /
The papers contained herein cover the most important and timely issues in the field of "Gettering and Defect Engineering in Semiconductor Technology", ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Durnten-Zuerich :
Trans Tech,
©2011.
|
| Colección: | Diffusion and defect data. Solid state phenomena ;
v. 178-179. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
| LEADER | 00000cam a2200000Ia 4500 | ||
|---|---|---|---|
| 001 | EBSCO_ocn823937707 | ||
| 003 | OCoLC | ||
| 005 | 20231017213018.0 | ||
| 006 | m o d | ||
| 007 | cr ||||||||||| | ||
| 008 | 130111s2011 sz a ob 101 0 eng d | ||
| 040 | |a CUS |b eng |e pn |c CUS |d N$T |d OCLCO |d UA@ |d YDXCP |d OCLCF |d OCLCO |d OCL |d OCLCO |d OCLCQ |d OCLCO |d OCLCQ |d AGLDB |d OCLCQ |d VTS |d STF |d M8D |d OCLCQ |d AJS |d OCLCO |d OCLCA |d OCLCO |d OCLCQ |d OCLCO | ||
| 019 | |a 840842094 | ||
| 020 | |a 9783038135159 |q (electronic bk.) | ||
| 020 | |a 3038135151 |q (electronic bk.) | ||
| 020 | |z 9783037852323 | ||
| 020 | |z 3037852321 | ||
| 029 | 1 | |a DEBBG |b BV043774624 | |
| 029 | 1 | |a DEBSZ |b 472769146 | |
| 035 | |a (OCoLC)823937707 |z (OCoLC)840842094 | ||
| 050 | 4 | |a TK7871.85 |b .I574 2011eb | |
| 072 | 7 | |a TEC |x 008090 |2 bisacsh | |
| 072 | 7 | |a TEC |x 008100 |2 bisacsh | |
| 082 | 0 | 4 | |a 621.38152 |2 23 |
| 049 | |a UAMI | ||
| 111 | 2 | |a GADEST (Conference) |n (14th : |d 2011 : |c Loipersdorf, Austria) | |
| 245 | 1 | 0 | |a Gettering and defect engineering in semiconductor technology XIV : |b selected papers from the XIVth International Biannual Meeting on Gettering and Defect Engineering in Semiconductor [Technology], (GADEST2011) September 25-30, 2011, Loipersdorf (Fürstenfeld), Austria / |c edited by W. Jantsch and F. Schäffler. |
| 246 | 1 | |i Also called: |a GADEST 2011 selected papers | |
| 260 | |a Durnten-Zuerich : |b Trans Tech, |c ©2011. | ||
| 300 | |a 1 online resource (xii, 520 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Solid state phenomena, |x 1012-0394 ; |v v. 178-179 | |
| 504 | |a Includes bibliographical references and indexes. | ||
| 588 | 0 | |a Print version record. | |
| 520 | |a The papers contained herein cover the most important and timely issues in the field of "Gettering and Defect Engineering in Semiconductor Technology", ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field. Review from Book News Inc.: Selected papers from a September 2011 meeting deal with fundamental and technological aspects of defects in electronic materials and devices. Papers are organized into 12 sections on areas such as silicon-based and advanced semiconductor materials, nanocrystals and quantum dots, crystalline silicon for solar cells, point defects in Si, defects at interfaces, defect and impurity characterization, gettering and defect engineering, advanced solar cells, silicon-based photonics, and modeling and simulation. Some specific topics addressed include recombination activity of twin boundaries in silicon ribbons, hydrogen decoration of vacancy related complexes in hydrogen implanted silicon, analysis of contaminated oxide-silicon interfaces, and spectroscopic studies of iron and chromium in germanium. Other areas examined include oxygen precipitation studied by X-ray diffraction techniques, structural defect studies of semiconductor crystals with Laue topography, tailoring the electrical properties of undoped GaP, and homogeneous and heterogeneous nucleation of oxygen in S-CZ. Jantsch and Schffler are affiliated with Johannes Kepler University, Austria. | ||
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 650 | 0 | |a Semiconductors |v Congresses. | |
| 650 | 0 | |a Getters |v Congresses. | |
| 650 | 0 | |a Silicon crystals |x Defects |v Congresses. | |
| 650 | 0 | |a Electrical engineering |x Materials |v Congresses. | |
| 650 | 6 | |a Semi-conducteurs |v Congrès. | |
| 650 | 6 | |a Getters |v Congrès. | |
| 650 | 6 | |a Silicium cristallisé |x Défauts |v Congrès. | |
| 650 | 6 | |a Génie électrique |x Matériaux |v Congrès. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a Electrical engineering |x Materials |2 fast | |
| 650 | 7 | |a Getters |2 fast | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 650 | 7 | |a Silicon crystals |x Defects |2 fast | |
| 653 | 1 | |a Gettering engineering | |
| 653 | 1 | |a Defect engineering | |
| 653 | 1 | |a Semiconductor technology | |
| 653 | 1 | |a GADEST | |
| 655 | 7 | |a Conference papers and proceedings |2 fast | |
| 700 | 1 | |a Jantsch, W. |q (Wolfgang), |d 1946- | |
| 700 | 1 | |a Schläffer, F. |q (Friedrich) | |
| 776 | 0 | 8 | |i Print version: |a International Meeting on Gettering and Defect Engineering in Semiconductor Technology (14th : 2011 : Loipersdorf, Austria). |t Gettering and defect engineering in semiconductor technology XIV. |d Durnten-Zuerich : Trans Tech, ©2011 |z 9783037852323 |w (OCoLC)794131865 |
| 830 | 0 | |a Diffusion and defect data. |n Pt. B, |p Solid state phenomena ; |v v. 178-179. | |
| 856 | 4 | 0 | |u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=553229 |z Texto completo |
| 938 | |a EBSCOhost |b EBSC |n 553229 | ||
| 938 | |a YBP Library Services |b YANK |n 10406042 | ||
| 994 | |a 92 |b IZTAP | ||