ISTFA 2012 : conference proceedings from the 38th International Symposium for Testing and Failure Analysis : November 11-15, 2012, Phoenix Convention Center, Phoenix, Arizona, USA.

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: International Symposium for Testing and Failure Analysis Phoenix Convention Center
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Materials Park, Ohio : ASM International, 2012.
Temas:
Electronics > Materials > Testing > Congresses.
Electronic apparatus and appliances > Testing > Congresses.
Appareils électroniques > Essais > Congrès.
TECHNOLOGY & ENGINEERING > Mechanical.
Electronic apparatus and appliances > Testing.
Electronics > Materials > Testing.
Conference papers and proceedings.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Title Page
  • Copyright
  • Board of Directors
  • Organizing Committee
  • Symposium Committee
  • User Groups
  • Contents
  • 2012 IPFA Best Paper
  • Laser Voltage Probing in Failure Analysis of Advanced Integrated Circuits on SOI
  • Emerging Concepts and Techniques
  • Closer to the Theoretical Limit: Spherical Corrections to Aplanatic Solid Immersion Imaging with Adaptive Optics
  • Fault Isolation of Open Defects Using Space Domain Reflectometry
  • Localization of Dead Open in a Solder Bump by Space Domain Reflectometry
  • Advanced Fault Isolation Technique Using Electro-Optical Terahertz Pulse Reflectometry (EOTPR) for 2D and 2.5D Flip-Chip PackageNovel Plasma FIB/SEM for High Speed Failure Analysis and Real Time Imaging of Large Volume Removal
  • FemtoFarad/TeraOhm Endpoint Detection for Microsurgery of Integrated Circuit Devices
  • Fault Isolation and Failure Analysis of TSV
  • Cross Section Analysis of Cu Filled TSVs Based On High Throughput Plasma- FIB Milling
  • Microstructural Considerations on the Reliability of 3D Packaging
  • High-Frequency TSV Failure Detection Method with Z ParameterEnhanced Failure Analysis on Open TSV Interconnects
  • Nanoprobing Techniques
  • A New Technique for Non-Invasive Short-Localisation in Thin Dielectric Layers by Electron Beam Absorbed Current (EBAC) Imaging
  • Precise Localization of 28 nm via Chain Resistive Defect Using EBAC and Nanoprobing
  • In FAB 300 mm Wafer Level Atomic Force Probe Characterization
  • Nanoelectronic Analog Circuit PFA â€? The Return of Circuit Level Probing
  • Fault Isolation and Failure Analysis of 3D Packages
  • Enhanced Comparison of Lock-in Thermography and Magnetic Microscopy for 3D Defect Localization of System in PackagesNon Destructive Failure Analysis of 3D Electronic Packages Using Both Electro Optical Terahertz Pulse Reflectometry and 3D X-ray Computed Tomography
  • Failure Analysis Using Scanning Acoustic Microscopy for Diagnostics of Electronic Devices and 3D System Integration Technologies
  • Nanoprobing Applications
  • Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90 nm Node CMOS Technology
  • Study of Static Noise Margin, Cell Stability and Influence of Electron Beam on Sub-30 nm SRAM Using SEM-Based Nanoprobing with 8 NanoprobesLeaky Device Channel Anomaly Identification and Case Study by Nano-Probing Technique, Curve Fitting, and Model Analysis
  • Photon Based Techniques: An Understanding
  • Photon Emission Spectra of FETs as Obtained by InGaAs Detector
  • Near-Infrared Photon Emission Spectroscopy Trends in Scaled SOI Technologies

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