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ISTFA 2012 : conference proceedings from the 38th International Symposium for Testing and Failure Analysis : November 11-15, 2012, Phoenix Convention Center, Phoenix, Arizona, USA.

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: International Symposium for Testing and Failure Analysis Phoenix Convention Center
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Materials Park, Ohio : ASM International, 2012.
Temas:
Acceso en línea:Texto completo

MARC

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245 1 0 |a ISTFA 2012 :  |b conference proceedings from the 38th International Symposium for Testing and Failure Analysis : November 11-15, 2012, Phoenix Convention Center, Phoenix, Arizona, USA. 
260 |a Materials Park, Ohio :  |b ASM International,  |c 2012. 
300 |a 1 online resource (xxi, 620 pages) :  |b illustrations (some color) 
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504 |a Includes bibliographical references and index. 
505 0 |a Title Page -- Copyright -- Board of Directors -- Organizing Committee -- Symposium Committee -- User Groups -- Contents -- 2012 IPFA Best Paper -- Laser Voltage Probing in Failure Analysis of Advanced Integrated Circuits on SOI -- Emerging Concepts and Techniques -- Closer to the Theoretical Limit: Spherical Corrections to Aplanatic Solid Immersion Imaging with Adaptive Optics -- Fault Isolation of Open Defects Using Space Domain Reflectometry -- Localization of Dead Open in a Solder Bump by Space Domain Reflectometry 
505 8 |a Advanced Fault Isolation Technique Using Electro-Optical Terahertz Pulse Reflectometry (EOTPR) for 2D and 2.5D Flip-Chip PackageNovel Plasma FIB/SEM for High Speed Failure Analysis and Real Time Imaging of Large Volume Removal -- FemtoFarad/TeraOhm Endpoint Detection for Microsurgery of Integrated Circuit Devices -- Fault Isolation and Failure Analysis of TSV -- Cross Section Analysis of Cu Filled TSVs Based On High Throughput Plasma- FIB Milling -- Microstructural Considerations on the Reliability of 3D Packaging 
505 8 |a High-Frequency TSV Failure Detection Method with Z ParameterEnhanced Failure Analysis on Open TSV Interconnects -- Nanoprobing Techniques -- A New Technique for Non-Invasive Short-Localisation in Thin Dielectric Layers by Electron Beam Absorbed Current (EBAC) Imaging -- Precise Localization of 28 nm via Chain Resistive Defect Using EBAC and Nanoprobing -- In FAB 300 mm Wafer Level Atomic Force Probe Characterization -- Nanoelectronic Analog Circuit PFA â€? The Return of Circuit Level Probing -- Fault Isolation and Failure Analysis of 3D Packages 
505 8 |a Enhanced Comparison of Lock-in Thermography and Magnetic Microscopy for 3D Defect Localization of System in PackagesNon Destructive Failure Analysis of 3D Electronic Packages Using Both Electro Optical Terahertz Pulse Reflectometry and 3D X-ray Computed Tomography -- Failure Analysis Using Scanning Acoustic Microscopy for Diagnostics of Electronic Devices and 3D System Integration Technologies -- Nanoprobing Applications -- Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90 nm Node CMOS Technology 
505 8 |a Study of Static Noise Margin, Cell Stability and Influence of Electron Beam on Sub-30 nm SRAM Using SEM-Based Nanoprobing with 8 NanoprobesLeaky Device Channel Anomaly Identification and Case Study by Nano-Probing Technique, Curve Fitting, and Model Analysis -- Photon Based Techniques: An Understanding -- Photon Emission Spectra of FETs as Obtained by InGaAs Detector -- Near-Infrared Photon Emission Spectroscopy Trends in Scaled SOI Technologies 
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