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121211s2012 ohuad ob 101 0 eng d |
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|a International Symposium for Testing and Failure Analysis
|n (38th :
|d 2012 :
|c Phoenix Convention Center)
|
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|a ISTFA 2012 :
|b conference proceedings from the 38th International Symposium for Testing and Failure Analysis : November 11-15, 2012, Phoenix Convention Center, Phoenix, Arizona, USA.
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260 |
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|a Materials Park, Ohio :
|b ASM International,
|c 2012.
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300 |
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|a 1 online resource (xxi, 620 pages) :
|b illustrations (some color)
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|a text
|b txt
|2 rdacontent
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|a computer
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|a online resource
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|a Includes bibliographical references and index.
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|a Title Page -- Copyright -- Board of Directors -- Organizing Committee -- Symposium Committee -- User Groups -- Contents -- 2012 IPFA Best Paper -- Laser Voltage Probing in Failure Analysis of Advanced Integrated Circuits on SOI -- Emerging Concepts and Techniques -- Closer to the Theoretical Limit: Spherical Corrections to Aplanatic Solid Immersion Imaging with Adaptive Optics -- Fault Isolation of Open Defects Using Space Domain Reflectometry -- Localization of Dead Open in a Solder Bump by Space Domain Reflectometry
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|a Advanced Fault Isolation Technique Using Electro-Optical Terahertz Pulse Reflectometry (EOTPR) for 2D and 2.5D Flip-Chip PackageNovel Plasma FIB/SEM for High Speed Failure Analysis and Real Time Imaging of Large Volume Removal -- FemtoFarad/TeraOhm Endpoint Detection for Microsurgery of Integrated Circuit Devices -- Fault Isolation and Failure Analysis of TSV -- Cross Section Analysis of Cu Filled TSVs Based On High Throughput Plasma- FIB Milling -- Microstructural Considerations on the Reliability of 3D Packaging
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|a High-Frequency TSV Failure Detection Method with Z ParameterEnhanced Failure Analysis on Open TSV Interconnects -- Nanoprobing Techniques -- A New Technique for Non-Invasive Short-Localisation in Thin Dielectric Layers by Electron Beam Absorbed Current (EBAC) Imaging -- Precise Localization of 28 nm via Chain Resistive Defect Using EBAC and Nanoprobing -- In FAB 300 mm Wafer Level Atomic Force Probe Characterization -- Nanoelectronic Analog Circuit PFA � The Return of Circuit Level Probing -- Fault Isolation and Failure Analysis of 3D Packages
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|a Enhanced Comparison of Lock-in Thermography and Magnetic Microscopy for 3D Defect Localization of System in PackagesNon Destructive Failure Analysis of 3D Electronic Packages Using Both Electro Optical Terahertz Pulse Reflectometry and 3D X-ray Computed Tomography -- Failure Analysis Using Scanning Acoustic Microscopy for Diagnostics of Electronic Devices and 3D System Integration Technologies -- Nanoprobing Applications -- Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90 nm Node CMOS Technology
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|a Study of Static Noise Margin, Cell Stability and Influence of Electron Beam on Sub-30 nm SRAM Using SEM-Based Nanoprobing with 8 NanoprobesLeaky Device Channel Anomaly Identification and Case Study by Nano-Probing Technique, Curve Fitting, and Model Analysis -- Photon Based Techniques: An Understanding -- Photon Emission Spectra of FETs as Obtained by InGaAs Detector -- Near-Infrared Photon Emission Spectroscopy Trends in Scaled SOI Technologies
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590 |
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|a eBooks on EBSCOhost
|b EBSCO eBook Subscription Academic Collection - Worldwide
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650 |
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|a Electronics
|x Materials
|x Testing
|v Congresses.
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650 |
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|a Electronic apparatus and appliances
|x Testing
|v Congresses.
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650 |
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6 |
|a Appareils électroniques
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|a Conference papers and proceedings.
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|0 (OCoLC)fst01423772
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776 |
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|i Print version:
|a International, ASM.
|t ISTFA 2012 : Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis.
|d Materials Park : A S M International, ©2012
|z 9781615039791
|
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