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Progress in new materials and mechanics research : selected, peer reviewed papers from the 2012 International Conference on Computer-aided Material and Engineering 2012 (ICCME 2012), March 17-18, 2012, Hangzhou, China /
The 2012 International Conference on Computer-Aided Material and Engineering (ICCME 2012) was held on the 17 and 18th March, 2012, in Hangzhou, China. The papers are divided into: Chapter 1: Mechanics Applications; Chapter 2: Materials - Study, Modeling and Technologies; Chapter 3: Material Engineer...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Durnten-Zurich, Switzerland ; Enfield, NH :
Trans Tech Publications,
©2012.
©2012 |
| Colección: | Advanced materials research ;
v. 502. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 111 | 2 | |a International Conference on Computer-aided Material and Engineering |d (2012 : |c Hangzhou, China) | |
| 245 | 1 | 0 | |a Progress in new materials and mechanics research : |b selected, peer reviewed papers from the 2012 International Conference on Computer-aided Material and Engineering 2012 (ICCME 2012), March 17-18, 2012, Hangzhou, China / |c edited by Xiancang Deng and Xufeng Dong. |
| 246 | 3 | 0 | |a 2012 International Conference on Computer-aided Material and Engineering |
| 246 | 3 | 0 | |a ICCME 2012 |
| 260 | |a Durnten-Zurich, Switzerland ; |a Enfield, NH : |b Trans Tech Publications, |c ©2012. | ||
| 264 | 4 | |c ©2012 | |
| 300 | |a 1 online resource (xvi, 491 pages) : |b illustrations (some color) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Advanced materials research, |x 1022-6680 ; |v 502 | |
| 504 | |a Includes bibliographical references and indexes. | ||
| 588 | 0 | |a Print version record. | |
| 520 | |a The 2012 International Conference on Computer-Aided Material and Engineering (ICCME 2012) was held on the 17 and 18th March, 2012, in Hangzhou, China. The papers are divided into: Chapter 1: Mechanics Applications; Chapter 2: Materials - Study, Modeling and Technologies; Chapter 3: Material Engineering; Chapter 4: Applied Mechanics and Mechanical Engineering. | ||
| 505 | 0 | |a Progress in New Materials and Mechanics Research; Preface, Committees, Sponsors; Table of Contents; Chapter 1: Mechanics Applications; Preliminary Research on the Measurement of Oxide Layer of ELID Based on the Laser Sensor and the Eddy Current Sensor; Long-Term Protection Effects of Electrochemical Chloride Removal on Reinforced Concretes; Research on the Failure Mechanism of Pitting Corrosion of the 304 Stainless Steel in Chloride Ions Environment; Interfacial Fracture Strength of Viscoelastic Inclusions in a Polymer Blend | |
| 505 | 8 | |a Conductivity of PANI-PVA Composite Conductive Coatings with the Doping of Different AcidChapter 2: Materials -- Study, Modeling and Technologies; Properties of Polyaniline with the Doping of Different Acid; Experimental Study on Galling Behavior of Advanced High Strength Steel in Sheet Metal Forming; Numerical Simulation of the Influence of Temperature and Pressure in CVI of C/C Composite; The Studies on Numerical Simulation of Unidirectional Solidification Process in 23t Steel Ingot; Dislocations in Gan Grown on Silicon | |
| 505 | 8 | |a Study on the Influence of Manufacturing Defects on Coefficient of Thermal Expansion of Plain Weave C/SiCStudy on Friction Reduction and Wear Resistance Process and Composition of FeS Solid Lubrication Duplex Layer; Fabricate Mould Insert with Conformal Cooling Channel Using Selective Laser Melting; Fabrication and Characterization of Transparent Conducting ZnO: Al Films for Organic Optoelectronic Devices; Properties of Indium Tin Oxide Films Prepared by RF Magnetron Sputtering at Different Substrate Temperatures; Study on Dielectric Relaxation in BiFeO3/Bi3.25La0.75Ti3O12 Film | |
| 505 | 8 | |a Researched on Dielectric Properties of Alumina Substrate MaterialStudy on Temperature Sensibility of Nano-Copper/Paraffin Materials; Study on Floatability and Separation of High Ash and Difficult Floatable Coal; Effect of Filler Loading and Temperature on Electrical Resistivity of Stainless Steel Fiber/PA6 Conductive Polymer Composites; Study on the Optical and Electrical Properties of Organic Semiconductor Thin Films for OLEDs; Influence of Substrate Temperature on the Characteristics of Zinc Oxide Thin Films Deposited by Magnetron Sputtering | |
| 505 | 8 | |a Luminescence Properties of Electron Trapping Material CaB4O7:Sm3+The Research on the Relationship between Cauchy Integral Theorem and Complex Function Integral in Mechanics of Materials; Cauchy Integral Formula on the Integration Path C on Singularity in Mechanics of Materials; Luminescence Properties of Novel Red Phosphor NaSrPO4:Eu3+; Upconversion Luminescent Properties of YVO4:Tm3+, Ho3+, Yb3+; Downconversion for Solar Cells in Sr3Gd(PO4)3:Tb, Yb Phosphors; Luminescence Properties of Ce3+ and Tb3+ Doped Strontium Pyroborate Phosphors | |
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| 650 | 0 | |a Computer-aided engineering |v Congresses. | |
| 650 | 0 | |a Computer algorithms |v Congresses. | |
| 650 | 6 | |a Ingénierie assistée par ordinateur |v Congrès. | |
| 650 | 6 | |a Algorithmes |v Congrès. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Engineering (General) |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Reference. |2 bisacsh | |
| 650 | 7 | |a Computer-aided engineering |2 fast | |
| 650 | 7 | |a Computer algorithms |2 fast | |
| 655 | 7 | |a Conference papers and proceedings |2 fast | |
| 700 | 1 | |a Deng, Xiancan, |e editor. | |
| 700 | 1 | |a Dong, Xufeng, |e editor. | |
| 776 | 0 | 8 | |i Print version: |a International Conference on Computer-aided Material and Engineering (2012 : Hangzhou, China). |t Progress in new materials and mechanics research. |d Durnten-Zurich, Switzerland ; Enfield, NH : Trans Tech Publications, ©2012 |w (DLC) 2011279960 |w (OCoLC)805948469 |
| 830 | 0 | |a Advanced materials research ; |v v. 502. | |
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