Defects-recognition imaging and physics in semiconductors XIV : selected peer reviewed papers from the 14th international conference on defects-recognition, imaging and physics in semiconductors, September 25-29, 2011, Miyazaki, Japan /

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This volume documents the latest understanding of many topics of current interest in the science and technology of defects in semiconductors. The investigation of defects in semiconductors is a little different to that in other fields of materials science: in order to observe defects in semiconducto...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: International Conference on Defects: Recognition, Imaging and Physics in Semiconductors Miyazaki, Japan
Otros Autores: Yamada-Kaneta, Hiroshi, Sakai, Akira
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Durnten-Zurich ; Enfield, N.H. : Trans Tech Publications, ©2012.
Colección:Materials science forum ; v. 725.
Temas:
Semiconductors > Defects > Congresses.
Image processing > Congresses.
Semi-conducteurs > Défauts > Congrès.
Traitement d'images > Congrès.
TECHNOLOGY & ENGINEERING > Electronics > Semiconductors.
TECHNOLOGY & ENGINEERING > Electronics > Solid State.
Image processing.
Semiconductors > Defects.
Defects recognition
Imaging
Semicoductors
DRIP
Conference papers and proceedings.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Defects-Recognition, Imaging and Physics in Semiconductors XIV; Preface, Message and Committee; Table of Contents; Chapter 1: Defects in SiC; Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography; Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography; Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy; Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
  • Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon CarbideElectron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing; Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings; Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method; Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC; Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers
  • Characterization of Dislocations in GaN Thin Film and GaN/AlN MultilayerMicroscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs; Chapter 3: III-V Compounds and Devices; Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography; Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping; Nitrogen Related Deep Levels in GaAsN Films Investigated by a Temperature Dependence of Piezoelectric Photothermal Signal
  • Intermixing in InP-Based Quantum Well Photonic Structures Induced by the Dry-Etching Process: A Spectral Imaging Cathodoluminescence StudyDefect Propagation in Broad-Area Diode Lasers; Kinetics of Defect Propagation during the Catastrophic Optical Damage (COD) in Broad-Area Diode Lasers; Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves; Chapter 4: Photovoltaics: From Material to Module; Lock-In Thermography and Related Topics in Photovoltaic Research

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