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Defects-recognition imaging and physics in semiconductors XIV : selected peer reviewed papers from the 14th international conference on defects-recognition, imaging and physics in semiconductors, September 25-29, 2011, Miyazaki, Japan /
This volume documents the latest understanding of many topics of current interest in the science and technology of defects in semiconductors. The investigation of defects in semiconductors is a little different to that in other fields of materials science: in order to observe defects in semiconducto...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Durnten-Zurich ; Enfield, N.H. :
Trans Tech Publications,
©2012.
|
| Colección: | Materials science forum ;
v. 725. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 111 | 2 | |a International Conference on Defects: Recognition, Imaging and Physics in Semiconductors |d (2011 : |c Miyazaki, Japan) | |
| 245 | 1 | 0 | |a Defects-recognition imaging and physics in semiconductors XIV : |b selected peer reviewed papers from the 14th international conference on defects-recognition, imaging and physics in semiconductors, September 25-29, 2011, Miyazaki, Japan / |c edited by Hiroshi Yamada-Kaneta and Akira Sakai. |
| 260 | |a Durnten-Zurich ; |a Enfield, N.H. : |b Trans Tech Publications, |c ©2012. | ||
| 300 | |a 1 online resource (xiii, 299 pages) : |b illustrations | ||
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| 490 | 1 | |a Materials science forum, |x 0255-5476 ; |v v. 725 | |
| 504 | |a Includes bibliographical references and author index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Defects-Recognition, Imaging and Physics in Semiconductors XIV; Preface, Message and Committee; Table of Contents; Chapter 1: Defects in SiC; Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography; Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography; Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy; Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers | |
| 505 | 8 | |a Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon CarbideElectron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing; Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings; Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method; Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC; Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers | |
| 505 | 8 | |a Characterization of Dislocations in GaN Thin Film and GaN/AlN MultilayerMicroscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs; Chapter 3: III-V Compounds and Devices; Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography; Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping; Nitrogen Related Deep Levels in GaAsN Films Investigated by a Temperature Dependence of Piezoelectric Photothermal Signal | |
| 505 | 8 | |a Intermixing in InP-Based Quantum Well Photonic Structures Induced by the Dry-Etching Process: A Spectral Imaging Cathodoluminescence StudyDefect Propagation in Broad-Area Diode Lasers; Kinetics of Defect Propagation during the Catastrophic Optical Damage (COD) in Broad-Area Diode Lasers; Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves; Chapter 4: Photovoltaics: From Material to Module; Lock-In Thermography and Related Topics in Photovoltaic Research | |
| 520 | |a This volume documents the latest understanding of many topics of current interest in the science and technology of defects in semiconductors. The investigation of defects in semiconductors is a little different to that in other fields of materials science: in order to observe defects in semiconductors and elucidate their physical nature, a very wide range of tools and techniques has been introduced or created; thanks to the inventive ideas of the researchers. This work clearly reflects the lively state of defect investigation in semiconductors. Review from Book News Inc.: Drawn from papers del. | ||
| 546 | |a English. | ||
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 650 | 0 | |a Semiconductors |x Defects |v Congresses. | |
| 650 | 0 | |a Image processing |v Congresses. | |
| 650 | 6 | |a Semi-conducteurs |x Défauts |v Congrès. | |
| 650 | 6 | |a Traitement d'images |v Congrès. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a Image processing. |2 fast |0 (OCoLC)fst00967501 | |
| 650 | 7 | |a Semiconductors |x Defects. |2 fast |0 (OCoLC)fst01112211 | |
| 653 | 1 | |a Defects recognition | |
| 653 | 1 | |a Imaging | |
| 653 | 1 | |a Semicoductors | |
| 653 | 1 | |a DRIP | |
| 655 | 7 | |a Conference papers and proceedings. |2 fast |0 (OCoLC)fst01423772 | |
| 700 | 1 | |a Yamada-Kaneta, Hiroshi. | |
| 700 | 1 | |a Sakai, Akira. | |
| 776 | 0 | 8 | |i Print version: |a International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (2011 : Miyazaki, Japan). |t Defects-recognition imaging and physics in semiconductors XIV. |d Durnten-Zurich ; Enfield, N.H. : Trans Tech Publications, ©2012 |w (OCoLC)806197764 |
| 830 | 0 | |a Materials science forum ; |v v. 725. | |
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