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Lattice dynamics and semiconductor physics : festschrift for Professor Kun Huang /

This review volume consists of scientific articles representing the frontier and most advanced progress in the field of semiconductor physics and lattice dynamics.

Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Yang, Chen Ning, 1922-, Huang, Kun, 1919-2005
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Singapore ; Teaneck, NJ : World Scientific, 1990.
Temas:
Acceso en línea:Texto completo
Tabla de Contenidos:
  • PREFACE; MODERN PHYSICS AND WARM FRIENDSHIP; PART A LATTICE DYNAMICS; ELECTRON-PHONON INTERACTION REVEALED BY RAMAN AND INFRARED SPECTROSCOPY; 1. INTRODUCTION; 2.2.2. Electron-phonon coupling in layered insertion materials. In2Se3 and InSe; 3. ELECTRON-PHONON INTERACTION REVEALED BY LIGHT SCATTERING.; 3.1. Light Scattering on Single Excitations.; 3.2. Light Scattering by Plasmons.; 3.3. Observation of the Plasmon-Phonon Coupling by Light Scattering.; REFERENCES; FIRST-PRINCIPLES STUDIES OF LATTICE DYNAMICS AND ELECTRONIC PROPERTIES OF SEMICONDUCTORS; I. INTRODUCTION.
  • II. GROUND STATE ENERGY OF A SOLIDA. Density-functional theory; B. Electron-ion potential; Direct summation over the conduction bands.; Direct summation.; B. Ground state properties; C. Electronic properties; V. CONCLUSIONS; ACKNOWLEDGMENT; REFERENCES; POINT DEFECTS AND RECOMBINATION IN SEMICONDUCTORS; 1. INTRODUCTION; 2. ENERGY LEVELS OF LOCALIZED POINT DEFECTS; 2.1 Defect Wave Function Localization and Electron-Phonon Coupling
  • Extrinsic Self-Trapping; 2.2 Metastable Defects (DX-centers); 2.2.1. Donors in CdF2.; 2.2.2. DX centers in AlGaAs.; 2.2.3. Structural models of metastable defects.
  • 2.3 Many-Electron Phenomena2.3.1 Problem of negative-U.; 2.3.2 Transition metal impurity levels.; 3. DEFECT MEDIATED RECOMBINATION; 3.1 Multiphonon Processes; 3.2 Auger-type processes; 3.1. Auger-type carrier trapping; 3.2. Luminescence quenching by the Auger effect; 3.3 Recombination enhanced defect reactions; 4. CONCLUDING REMARKS; 5. REFERENCES; MOLECULAR DYNAMICS AND QUANTUM MONTE CARLO SIMULATIONS OF STATIC AND DYNAMICAL PROPERTIES OF BULK AND SURFACE PHONONS; 1. INTRODUCTION; 2. PATH INTEGRAL QUANTUM MONTE CARLO EVALUATION OF THERMODYNAMIC FUNCTIONS OF ANHARMONIC CRYSTALS.
  • 3. MOLECULAR DYNAMICS SIMULATIONS OF SURFACE PHONONS4. CONCLUSIONS; ACKNOWLEDGMENTS; REFERENCES; LASER STUDIES OF POLARITONS; REFERENCES; QUANTAL VERSUS CLASSICAL PICTURES FOR THE OPTICALLY EXCITED ELECTRON INTERACTING WITH PHONONS; 1. Introduction; 2. The Zero-Phonon Line and the Phonon Sidebands; 3. The Classical Limit and the Interaction Mode; 4. Quantal versus Classical Pictures; References; Phonoriton: A New Elementary Excitation in Semiconductors under Intense Pump Conditions; 0. Historical Background; 1. Introduction; 2. Two level system; 3. Existence Conditions For Phonoriton.
  • 4. Phonoriton: Relation to Inverse Raman Scattering5. Experimental Detection of the Phonoriton; a) A Proposed Non -Linear RBS Experiment; b) A Proposed Reflection Experiment; 6 Threshold behavior, Coherence and Noise, Squeezing; 7. Concluding Remark; References; Quantum Theory of Surface Phonon-Polaritons; I. INTRODUCTION; II. BASIC VIEWPOINT OF THE QUANTUM THEORY METHOD; 2.1 Some Difficulties; 2.2 Main Contents of The Quantum Theory of Surface Phonon-Polaritons; III. HAMILTONIAN OF THE PH0N0N-PH0T0N INTERACTION SYSTEM; 3.1 The Matter Hamiltonian; 3.2 The Radiation Hamiltonian.