BSIM4 and MOSFET modeling for IC simulation /

This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emph...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Liu, Weidong
Otros Autores: Hu, Chenming
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Singapore : World Scientific Pub. Co., 2011.
Colección:International series on advances in solid state electronics and technology.
Temas:
Metal oxide semiconductor field-effect transistors > Computer simulation.
Electronic circuit design > Data processing.
Transistors MOSFET > Simulation par ordinateur.
TECHNOLOGY & ENGINEERING > Electronics > Transistors.
Electronic circuit design > Data processing
Metal oxide semiconductor field-effect transistors > Computer simulation
Acceso en línea:Texto completo
Descripción
Sumario:This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be ro.
Descripción Física:1 online resource (xix, 414 pages) : illustrations
Bibliografía:Includes bibliographical references and index.
ISBN:9789812813992
9812813993

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