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Horizons in computer science research. Volume 2 /
| Clasificación: | Libro Electrónico |
|---|---|
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York :
Nova Science Publishers,
©2011.
|
| Colección: | Horizons in Computer Science.
|
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- ""HORIZONS IN COMPUTER SCIENCE RESEARCH VOLUME 2 ""; ""HORIZONS IN COMPUTER SCIENCE ""; ""HORIZONS IN COMPUTER SCIENCE RESEARCH VOLUME 2 ""; ""CONTENTS ""; ""PREFACE ""; ""WRAPPER DESIGN FOR CDMA SHARED BUS IN SOC ""; ""Abstract ""; ""1. Introduction ""; ""2. Taxonomy of On-Chip Communication ""; ""3. Shared on-Chip Communication Architecture ""; ""4. Interfacing IP Blocks into SoC Using Wrappers ""; ""5. Multiprocessor System Based on CDMA Shared System Bus ""; ""6. CDMA Wrapper Structure ""; ""6.1. Related Works on Bus-Based Wrappers ""
- ""6.2. Description of Wrapper Structure """"6.3. CDMA Coded Bus Transfer Operations ""; ""7. Design Dilemmas ""; ""8. Experiment Setup ""; ""8.1. Performance Metrics ""; ""Wrapper Performance Metrics ""; ""Data Transfer Latency Ratio ""; ""A. Write Operation ""; ""B. Read Operation ""; ""Metrics Q and R ""; ""9. Experimental Results ""; ""9.1. Wrapper Logic Performance in FPGA ""; ""Absolute Performance ""; ""Relative Performance ""; ""9.2. Data Transfer Latency Performance in FPGA ""; ""9.3. ASIC Implementation ""; ""10. Conclusion ""; ""Acknowledgments ""; ""References ""
- ""THE FLASH MEMORY BASED ON SILICON NITRIDE (SONOS) """"Abstract ""; ""1. Introduction ""; ""2. Two-Band Conduction Model in The Si3N4, the Drift- Diffusion Approximation ""; ""3. The Traps in the Si3N4 ""; ""3.1. Si Dangling Bond ""; ""3.2. Si-Si Bond ""; ""3.3. N Dangling Bond ""; ""4. Mechanism of the Trap Ionization ""; ""4.1. A Frenkel Model with Thermally Assisted Tunneling ""; ""4.2. The Multiphonon Mechanism Ionization ""; ""5. The Charge Transport in Si3N4. Experiment and Numerical Simulation ""; "" 6. The Threshold Voltage and the Memory Window ""
- ""7. Typical Write/Erase Characteristics of SONOS """"8. Retention ""; ""9. Optimization of Sonos ""; ""9.1. Using the High-K Dielectric as Blocking Oxide ""; ""9.2. Optimization of the Dielectric Constant of a Blocking Dielectric ""; ""9.3. Using the Triple (Sio2/Si3N4/Sio2) Dielectric as Tunnel Dielectric (BE-SONOS) ""; ""9.4. Using the Gate with Higher Work Function (Tan/Al2O3/Si3N4/Sio2/Si Structure) instead Poly-Si ""; ""9.5. Using Another Material with High Traps Concentration as Charge Storage Material instead of Si N ""
- ""10. The FLASH Memory Based on Semiconductors/Metal Nanoclusters Embedded in Dielectric """"11. Conclusions ""; ""Acknowledgments ""; ""References ""; "" TEACHING PROGRAMMING TO SECONDARY EDUCATION STUDENTS WITH A LEARNING ENVIRONMENT BASED ON „KAREL THE ROBOT‟: A PILOT STUDY IN A GREEK HIGH SCHOOL""; ""Abstract ""; ""1. Introduction ""; ""2. The Features of the Learning Environment Based on „Karel the Robot‟ ""; ""3. The Proposed Series of Lessons ""; ""3.1. First Didactical Hour: Presentation of the Microworld and the Basic Instructions ""