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HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France /
The aim of this collection of peer-reviewed papers is to promote the open discussion of SiC hetero-epitaxy as related to the possibility of growing SiC on other materials and of growing various SiC polytypes so as to take advantage of the possibilities of band-gap engineering, These proceedings pres...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Switzerland :
Trans Tech Publications Ltd,
2012.
©2012 |
| Colección: | Materials science forum ;
v. 711. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 245 | 0 | 0 | |a HeteroSiC & WASMPE 2011 : |b selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France / |c edited by Daniel Alquier. |
| 246 | 3 | 0 | |a Selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France |
| 260 | |a Switzerland : |b Trans Tech Publications Ltd, |c 2012. | ||
| 264 | 4 | |c ©2012 | |
| 300 | |a 1 online resource : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Materials science forum, |x 1662-9752 ; |v v. 711 | |
| 504 | |a Includes bibliographical references and index. | ||
| 520 | |a The aim of this collection of peer-reviewed papers is to promote the open discussion of SiC hetero-epitaxy as related to the possibility of growing SiC on other materials and of growing various SiC polytypes so as to take advantage of the possibilities of band-gap engineering, These proceedings present the latest developments in Silicon Carbide, and the prospects for Gallium Nitride (GaN on Si, SiC, sapphire and free-standing) and Diamond power electronics. Finally, the progress made in Graphene technology, such as its introduction into devices and its relationship to SiC epitaxial material, is considered. | ||
| 505 | 0 | |a HeteroSiC & WASMPE 2011; Preface, Sponsors and Committees; Table of Contents; Chapter 1: SiC Heteroepitaxial Growth; Progress in 3C-SiC Growth and Novel Applications; Elimination of Twin Boundaries when Growing 3C-SiC Heteroepitaxial by Vapour-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate; CVD Growth of 3C-SiC on 4H-SiC Substrate; The Influence of C3H8 and CBr4 on Structural and Morphological Properties of 3C-SiC Layers; Structural Characterization of Heteroepitaxial 3C-SiC; Consideration on the Thermal Expansion of 3C-SiC Epitaxial Layer on Si Substrates. | |
| 505 | 8 | |a Epitaxial Growth of 3C-SiC onto Silicon Substrate by VLS Transport Using CVD-Grown 3C-SiC Seeding LayerChapter 2: Microsystems and Microstructures Based on SiC; Study of 3C-SiC Mechanical Resonators, Filters and Mixers; Mechanical Proprieties and Residual Stress Evaluation on Heteroepitaxial 3C-SiC/Si for MEMS Application; Strain Field Analysis of 3C-SiC Free-Standing Microstructures by Micro-Raman and Theoretical Modelling; Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition. | |
| 505 | 8 | |6 880-01 |a Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETsThe Influence of Gate Material, SiO2 Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors; Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour; Visible and Deep Ultraviolet Study of SiC/SiO2 Interface; High Temperature Capability of High Voltage 4H-SiC JBS; Parallel and Serial Association of SiC Light Triggered Thyristors. | |
| 505 | 8 | |a Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETsChapter 4: Characterization: Devices and Material; Structural Characterization of Graphene Grown by Thermal Decomposition of Off-Axis 4H-SiC (0001); Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy; Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si; On Applicability of Time-Resolved Optical Techniques for Characterization of Differently Grown 3C-SiC Crystals and Heterostructures. | |
| 546 | |a English. | ||
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 650 | 0 | |a Semiconductors |x Materials |v Congresses. | |
| 650 | 0 | |a Materials science |v Congresses. | |
| 650 | 0 | |a Materials |v Congresses. | |
| 650 | 6 | |a Semi-conducteurs |x Matériaux |v Congrès. | |
| 650 | 6 | |a Science des matériaux |v Congrès. | |
| 650 | 6 | |a Matériaux |v Congrès. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a Materials |2 fast | |
| 650 | 7 | |a Materials science |2 fast | |
| 650 | 7 | |a Semiconductors |x Materials |2 fast | |
| 653 | 1 | |a Advanced semiconductor materials | |
| 653 | 1 | |a Power electronics applications | |
| 653 | 1 | |a HeteroSiC | |
| 653 | 1 | |a WASMPE | |
| 655 | 7 | |a Conference papers and proceedings |2 fast | |
| 700 | 1 | |a Alquier, Daniel. | |
| 776 | 0 | 8 | |i Print version: |a Alquier, Daniel. |t HeteroSiC & WASMPE 2011. |d Zurich : Trans Tech Publishers, ©2012 |z 9783037853320 |
| 830 | 0 | |a Materials science forum ; |v v. 711. |x 1662-9752 | |
| 856 | 4 | 0 | |u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=517109 |z Texto completo |
| 880 | 8 | |6 505-01/(S |a Fabrication of SiC Nanopillars by Inductively Coupled SF6/O2 PlasmaMaterial Limitations for the Development of High Performance SiC NWFETs; Selective β-SiC/SiO2 Core-Shell NW Growth on Patterned Silicon Substrate; High Frequency 3C-SiC AFM Cantilever Using Thermal Actuation and Metallic Piezoresistive Detection; Detailed Experimental Study of Mean and Gradient Stresses in Thin 3C-SiC Films Performed Using Micromachined Cantilevers; Chapter 3: Devices on SiC; High Quality 3C-SiC Substrate for MOSFET Fabrication; Characterization of Band Diagrams of Different Metal-SiO2-SiC(3C) Structures. | |
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