ISTFA 2011 : conference proceedings from the 37th International Symposium for Testing and Failure Analysis, November 13-17, 2011, San Jose Convention Center, San Jose, California /

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores Corporativos: International Symposium for Testing and Failure Analysis San Jose, Calif., Electronic Device Failure Analysis Society, International Symposium for Testing and Failure Analysis/2011, ASM International
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Materials Park, OH : ASM International, 2011.
Temas:
Electronics > Materials > Testing > Congresses.
Electronic apparatus and appliances > Testing > Congresses.
Appareils électroniques > Essais > Congrès.
TECHNOLOGY & ENGINEERING > Electronics > Digital.
TECHNOLOGY & ENGINEERING > Electronics > Microelectronics.
Electronic apparatus and appliances > Testing
Electronics > Materials > Testing
Testing analysis
Conference papers and proceedings
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Title Page
  • Copyright
  • Contents
  • IPFA 2011 Best Paper
  • Electrical Failure and Damage Analysis of Multi-layer Metal Films on Flexible Substrate during Cyclic Bending Deformation
  • Session 1: Emerging FA Techniques and Concepts
  • A Position-Sensitive, Single-Photon Detector with Enhanced NIR Response
  • Advanced Scan Chain Failure Analysis Using Laser Modulation Mapping and Continuous Wave Probing
  • Thermal Frequency Imaging: A new application of Laser Voltage Imaging applied on 40nm technology
  • Local Lattice Strain Measurement using Geometric Phase Analysis of Dark Field Images from Scanning Transmission Electron MicroscopyCorrecting for spherical aberrations in solid immersion microscopy using a deformable mirror
  • Session 2: Circuit Edit
  • The Challenges of Backside Focused Ion Beam (FIB) Editing in the Presence of Deep Trench Decoupling Capacitors
  • State of the Art Substrate Manipulation As a Tool for Enhancing Product Performance
  • Neon Ion Microscope Nanomachining Considerations
  • Instant Solid Immersion Lens creation in silicon with a Focused Ion Beam- comparing refractive and diffractive methodsCircuit Edit and Optical Probe Development and Validation for Next Generation Process Nodes
  • Session 3: Packaging and Assembly Level FA I
  • 3DIC Fault Isolation Using the OBIRCH Approach
  • Improving Wire Sweep Performance by Measuring Degree of Cure of Epoxy Mold Compounds
  • Use of Lock-In Thermography for Non-Destructive 3D Defect Localization on System in Package and Stacked-Die Technology
  • Quantitative Phase Shift Analysis for 3D Defect Localization Using Lock-in ThermographyFailure Analysis of Flip Chip C4 Package Using Focused Ion Beam Milling Technique
  • Session 4: Test and Diagnostics
  • Layout-aware Diagnosis Leads to Efficient and Effective Physical Failure Analysis
  • Device Selection for Failure Analysis of Chain Fails Using Diagnosis Driven Yield Analysis
  • Debugging an Invisible Flaky Scan Chain Defect
  • Diagnose Compound Hold Time Faults Caused by Spot Delay Defects at Clock Tree
  • Session 5: Defect Characterization and Metrology
  • A Comprehensive Analysis Methodology for Gate Oxide Integrity Failure Using Combined FA TechniquesAl Bondpads, Halogens, and an ESCA-based Search for the Invisible Cause of Poor Throughput at Wafer Probe
  • Whisker Formation in Copper Electroplating
  • Comprehensive nano-structural approach of SSRM nanocontact on siliconthrough TEM-STEM study
  • Highly Automated Transmission Electron Microscopy Tomography for Defect Understanding
  • Transmission Electron Microscopy Characterization of FinFET â€? Understanding the 3D Structure by 2D Imaging Technique

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