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Advances in III-V semiconductor nanowires and nanodevices /

Annotation

Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Li, Jianye, Wang, Deli, LaPierre, Ray R.
Formato: Electrónico eBook
Idioma:Inglés
Publicado: [Oak Park, Ill.?] : Bentham eBooks, [2011]
Temas:
Acceso en línea:Texto completo

MARC

LEADER 00000cam a2200000Ma 4500
001 EBSCO_ocn769188168
003 OCoLC
005 20231017213018.0
006 m o d
007 cr cn|||||||||
008 111125s2011 ilua ob 001 0 eng d
040 |a E7B  |b eng  |e pn  |c E7B  |d DEBSZ  |d OCLCO  |d OCLCQ  |d N$T  |d OCLCQ  |d OCLCF  |d AU@  |d OCLCQ  |d LOA  |d AGLDB  |d COCUF  |d MOR  |d PIFAG  |d OCLCQ  |d STF  |d WRM  |d VTS  |d NRAMU  |d VT2  |d OCLCQ  |d WYU  |d UKCRE  |d AJS  |d OCLCO  |d OCLCQ  |d OCLCO 
019 |a 842256672  |a 961637807  |a 962668559  |a 966217353  |a 988520211  |a 992110939  |a 1037797825  |a 1038622654  |a 1045553756  |a 1055341440  |a 1081291362  |a 1153479985 
020 |a 9781608050529  |q (electronic bk.) 
020 |a 1608050521  |q (electronic bk.) 
029 1 |a AU@  |b 000050893853 
029 1 |a AU@  |b 000053009590 
029 1 |a DEBSZ  |b 372742661 
029 1 |a DEBSZ  |b 472582739 
029 1 |a NZ1  |b 14692330 
035 |a (OCoLC)769188168  |z (OCoLC)842256672  |z (OCoLC)961637807  |z (OCoLC)962668559  |z (OCoLC)966217353  |z (OCoLC)988520211  |z (OCoLC)992110939  |z (OCoLC)1037797825  |z (OCoLC)1038622654  |z (OCoLC)1045553756  |z (OCoLC)1055341440  |z (OCoLC)1081291362  |z (OCoLC)1153479985 
050 4 |a TK7871.85  |b .A38 2011eb 
072 7 |a SCI  |x 050000  |2 bisacsh 
072 7 |a TEC  |x 027000  |2 bisacsh 
082 0 4 |a 620.5 
049 |a UAMI 
245 0 0 |a Advances in III-V semiconductor nanowires and nanodevices /  |c edited by Jianye Li, Deli Wang, Ray R. LaPierre. 
260 |a [Oak Park, Ill.?] :  |b Bentham eBooks,  |c [2011] 
300 |a 1 online resource (vi, 178 pages) :  |b illustrations (chiefly color) 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
504 |a Includes bibliographical references and indexes. 
520 8 |a Annotation  |b Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest for next generation optoelectronic devices including transistors, light emitting diodes, lasers, photodetectors, and solar cells. Advances in III-V Semiconductor Nanowires and Nanodevices is an account of recent progress in the synthesis, characterization, physical properties, device fabrication, and applications of binary compound and ternary alloy III-V semiconductor nanowires. Each chapter is prepared by renowned experts in the field, describing the current state of knowledge and key areas of research. The book is written at the expert level, but also serves as a guide for researchers or graduate students aiming to enter semiconductor research. 
590 |a eBooks on EBSCOhost  |b EBSCO eBook Subscription Academic Collection - Worldwide 
650 0 |a Semiconductors. 
650 6 |a Semi-conducteurs. 
650 7 |a semiconductor.  |2 aat 
650 7 |a SCIENCE  |x Nanoscience.  |2 bisacsh 
650 7 |a TECHNOLOGY & ENGINEERING  |x Nanotechnology & MEMS.  |2 bisacsh 
650 7 |a Semiconductors  |2 fast 
700 1 |a Li, Jianye. 
700 1 |a Wang, Deli. 
700 1 |a LaPierre, Ray R. 
856 4 0 |u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=500581  |z Texto completo 
938 |a ebrary  |b EBRY  |n ebr10504670 
938 |a EBSCOhost  |b EBSC  |n 500581 
994 |a 92  |b IZTAP