Quasicrystals : types, systems, and techniques /

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Puckermann, Beth E. (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New York : Nova Science Publishers, Inc., [2011]
Colección:Materials science and technologies series.
Physics research and technology.
Temas:
Quasicrystals.
Quasicristaux.
SCIENCE > Physics > Condensed Matter.
Quasicrystals
Acceso en línea:Texto completo

MARC

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245 0 0 |a Quasicrystals :  |b types, systems, and techniques /  |c Beth E. Puckermann, editor. 
264 1 |a New York :  |b Nova Science Publishers, Inc.,  |c [2011] 
300 |a 1 online resource. 
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490 1 |a Materials science and technologies 
490 1 |a Physics research and technology 
504 |a Includes bibliographical references and index. 
588 |a Description based on print version record. 
505 0 |a QUASICRYSTALS: TYPES, SYSTEMS, AND TECHNIQUES -- QUASICRYSTALS: TYPES, SYSTEMS, AND TECHNIQUES -- Contents -- Preface -- Dominance of Magnetic Scattering in Al70Pd20+Xmn10-X (X = 0, 1 and 2), Al70Pd20Mn8(TM)2 (TM=Fe, Cr, Co and Ni) and Al70-Xbx Pd20Mn10 (X = 0, 0.5,1, 2 and 4) Stable Icosahedral Quasicrystals -- Abstract -- 1. Introduction -- 1.1. Phase Diagram -- 1.2. Magnetic Properties -- 1.3. Electrical Conductivity -- 2. Synthesis and Characterization Details -- 3. Part I -- 3.1. Results and Discussions -- 3.1.1. Structural Characterization 
505 8 |a 3.1.2. Magnetic Characterization3.1.3. Conductivity Vs. Temperature (( -T) -- 3.1.3.1. ( -T Minimum -- 3.1.3.2. ( -T Maximum -- 3.1.3.3. Possible Origin of Observed ( -T Behavior -- 3.1.4. Magneto-Resistance -- 4. Part II -- 4.1. Results and Discussion -- 4.1.1. Structural Characterization -- 4.1.2. Magnetic Characterization -- 4.1.3. Conductivity Vs. Temperature -- 4.1.3.1. (( -T) Minimum -- 4.1.3.2. ( -T Maximum -- 4.1.3.3. Possible Origin of ( -T Behavior -- 4.1.4. Magneto-Resistance -- 5. Part III -- 5.1. Results and Discussion 
505 8 |a 5.1.1. Structural Characterization5.1.2. Magnetic Characterization -- 5.1.3. Conductivity Vs. Temperature -- 5.1.4. Magneto-Resistance Measurement -- Conclusions -- Annexure I -- References -- Logarithmic Periodicity â€? Properties, Tests and Uncertainties -- Abstract -- 1. Introduction -- 2. Model -- 3. Properties -- 3.1. Observations -- 3.1.1 -- 3.1.2. -- 3.1.3. -- 3.1.4. -- 3.1.5. -- 3.1.6. -- 3.2. Consequences -- 3.2.1. Indexation -- 3.2.2. The Compromise Spacing Effect -- 3.2.3 Dimensions -- 3.2.4. Enthalpy, the Driving Force 
505 8 |a 3.2.5. Angular Filtering3.2.6. Double Diffraction -- 3.2.7. Electronic States -- 4. Evidence -- 4.1. Simplicity, Symmetry, and Sharpness -- 4.2. Ranking of Beam Intensities and Calculated â€?Structure Factorsâ€? -- 4.2.1. Logarithmic Periodicity -- 4.2.2. Double Diffraction in CBED -- 4.2.3. Bragg Anomaly in the 2-Fold Pattern -- 4.2.4. 2-Fold Pattern Orientation Anomaly -- 4.3. Diffraction Due to Clusters -- 4.4. HREM Images of Clusters and Superclusters -- 4.4.1. â€?Structure Factorâ€? For The HREM Model Structure 
505 8 |a 4.4.2. The 3-Fold Cluster Center in the 5-Fold Pattern5. Uncertainties -- 5.1. Extension -- 5.2. Defects -- 5.2.1. The Aperiodic Cluster â€?Holeâ€? -- 5.2.2. The â€?Holeâ€? in Supercluster Order 1 -- 5.2.3. The â€?Holeâ€? in Superclusters of Higher Order -- 5.2.4. Glassy Structures -- 5.3. Limitation to Binary Systems -- 5.4. Quasicrystal Growth Mechanisms -- Conclusion -- Appendix 1. Quasi Bragg Diffraction -- Appendix 2. Lemmas, Proofs and Corollaries -- Reference -- Vacancies in Quasicrystals -- Abstract -- 1. Introduction 
546 |a English. 
590 |a eBooks on EBSCOhost  |b EBSCO eBook Subscription Academic Collection - Worldwide 
650 0 |a Quasicrystals. 
650 6 |a Quasicristaux. 
650 7 |a SCIENCE  |x Physics  |x Condensed Matter.  |2 bisacsh 
650 7 |a Quasicrystals  |2 fast 
700 1 |a Puckermann, Beth E.,  |e editor. 
776 0 8 |i Print version:  |t Quasicrystals  |d New York : Nova Science Publishers, c2011.  |z 9781617611230 (hardcover)  |w (DLC) 2010027150 
830 0 |a Materials science and technologies series. 
830 0 |a Physics research and technology. 
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