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Electromigration in ULSI interconnections /
Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on elect...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Autor Corporativo: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore ; Hackensack, N.J. :
World Scientific Pub. Co.,
©2010.
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| Colección: | International series on advances in solid state electronics and technology.
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| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 100 | 1 | |a Tan, Cher Ming, |d 1959- | |
| 245 | 1 | 0 | |a Electromigration in ULSI interconnections / |c Cher Ming Tan. |
| 260 | |a Singapore ; |a Hackensack, N.J. : |b World Scientific Pub. Co., |c ©2010. | ||
| 300 | |a 1 online resource (xix, 291 pages) : |b illustrations (some color) | ||
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| 490 | 1 | |a International series on advances in solid state electronics and technology | |
| 504 | |a Includes bibliographical references and index. | ||
| 505 | 0 | |a 1. Introduction. 1.1. What is electromigration? 1.2. Importance of electromigration. 1.3. Outlines of this book -- 2. History of electromigration. 2.1. Understanding the physics of electromigration. 2.2. Electromigration lifetime modeling. 2.3. Electromigration lifetime improvement. 2.4. Electromigration Aware IC design -- 3. Experimental studies of Al interconnections. 3.1. Introduction. 3.2. Process-induced failure physics. 3.3. Design-induced failure mechanisms. 3.4. Self-induced process during EM. 3.5. Electromigration test structure design. 3.6. Package-Level Electromigration Test (PET). 3.7. Rapid electromigration test. 3.8. Practical consideration in electromigration testing. 3.9. Failure modes in electromigration. 3.10. Test data analysis. 3.11. Failure analysis on EM failures. 3.12. Conclusion -- 4. Experimental studies of Cu interconnections. 4.1. Different in interconnect processing and its impact on EM physics. 4.2. Process-induced failure physics. 4.3. Design-induced failure mechanism. 4.4. Electromigration testing. 4.5. Statistics of Cu electromigration -- 5. Numerical modeling of electromigration. 5.1. 1D continuum electromigration modeling. 5.2. 2D EM modeling. 5.3. Electromigration simulation using atomic flux divergence and finite element analaysis. 5.4. Monte Carlo simulation of electromigration. 5.5. Resistance change modeling -- 6. Future challenges. 6.1. Electromigration modeling. 6.2. EDA tool development. 6.3. Physics of electromigration. 6.4. Electromigration testing. 6.5. New failure mechanism for interconnects. 6.6. Alternative interconnect structure. 6.7. Alternative interconnect system. | |
| 520 | |a Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed. | ||
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| 650 | 0 | |a Electrodiffusion. | |
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| 650 | 6 | |a Électromigration. | |
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