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MOSFET modeling for circuit analysis and design /
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore ; Hackensack, NJ :
World Scientific,
©2007.
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| Colección: | International series on advances in solid state electronics and technology.
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| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 100 | 1 | |a Galup-Montoro, Carlos. | |
| 245 | 1 | 0 | |a MOSFET modeling for circuit analysis and design / |c Carlos Galup-Montoro, Márcio Cherem Schneider. |
| 260 | |a Singapore ; |a Hackensack, NJ : |b World Scientific, |c ©2007. | ||
| 300 | |a 1 online resource (xxiv, 418 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
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| 490 | 1 | |a International series on advances in solid state electronics and technology | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension. | |
| 520 | |a This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex. | ||
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| 650 | 0 | |a Metal oxide semiconductor field-effect transistors |x Mathematical models. | |
| 650 | 0 | |a Field-effect transistors |x Mathematical models. | |
| 650 | 6 | |a Transistors MOSFET |x Modèles mathématiques. | |
| 650 | 6 | |a Transistors à effet de champ |x Modèles mathématiques. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Transistors. |2 bisacsh | |
| 650 | 7 | |a Field-effect transistors |x Mathematical models. |2 fast |0 (OCoLC)fst00923929 | |
| 650 | 7 | |a Metal oxide semiconductor field-effect transistors |x Mathematical models. |2 fast |0 (OCoLC)fst01017619 | |
| 700 | 1 | |a Schneider, Márcio Cherem. | |
| 776 | 0 | 8 | |i Print version: |a Galup-Montoro, Carlos. |t MOSFET modeling for circuit analysis and design. |d Singapore ; Hackensack, NJ : World Scientific, ©2007 |z 9812568107 |z 9789812568106 |w (DLC) 2007298484 |w (OCoLC)140548109 |
| 830 | 0 | |a International series on advances in solid state electronics and technology. | |
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