ISTFA 2006 : Proceedings of the 32nd International Symposium for Testing and Failure Analysis, November 12-16, 2006, Renaissance Austin Hotel, Austin, Texas, USA /
Clasificación: | Libro Electrónico |
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Autores Corporativos: | , , |
Formato: | Electrónico Congresos, conferencias eBook |
Idioma: | Inglés |
Publicado: |
Materials Park, OH :
ASM International,
2006.
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Temas: | |
Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Contents
- Session 1: Advanced Techniques 1
- Near-field scanning microwave probe for rapid detection of non-visual and parametric defects in Cu/low- k interconnect on production wafers
- Non-invasive acoustic phonon characterization of dynamic MEMS
- Magnetic current imaging with magnetic tunnel junction sensors: case study and analysis
- Session 2: System Level Analysis 1
- Analysis and Identification of Off-Odor Compounds in Electronic Systems
- System Failure Analysis Process and Case Study
- Using a Unified Data Stream to drive Failure Analysis for Product Improvement in the Personal Computer (PC) EnvironmentSession 3: Test and Diagnostics
- Triangulating to a Defect's Physical Coordinates Using Multiple Supply Pad IDDQs: Test Chip Results
- Logical-to-physical Device Navigation using Place-and-Route Data as an Alternative to LVS
- Fundamental Considerations for CDM failure in 90nm Products
- Session 4: Circuit Edit and Beam-Based Sample Preparation
- Development of a Circuit Edit Process Scalable in Dimension and Material
- Quantitative electrical analysis of FIB prepared vias on BiCMOS and CMOS090 designsStudy on the Effect of FIB Electron Beam Assisted Platinum Deposition on TEM Sample Analysis
- Experiment study on Crystal/Amorphous Structure of TEM Samples Prepared by FIB Milling
- Advanced Fringe Analysis Techniques in Circuit Edit
- Session 5: Scanning Probe Microscopy
- Direct Measurements of Charge in Floating Gate Transistor Channels of Flash Memories Using Scanning Capacitance Microscopy
- Development of Backside Scanning Capacitance Microscopy Technique for Advanced SOI MicroprocessorsMaterial and doping contrast in semiconductor devices at nanoscale resolution using scattering- type scanning near-field optical microscopy
- Identification of Root Cause Failure in Silicon on Insulator Body Contacted nFETs using Scanning Capacitance Microscopy and Scanning Spreading Resistance Microscopy
- Session 7: Package Level Analysis 1
- Intermittent Failures in High Pin Count Packaging
- Microstructure Analysis of Wafer Bump Nodule
- Packaging Material has contributed to high Idd_Pd failures in CMOS ICsSession 8: Discretes, Passives, MEMS, and Optoelectronics
- Inductive Operating Life Stress Metal Breakdown Mechanism
- Root Cause finding of a Diode Leakage Failure using Scanning Magnetic Microscopy and ToF-SIMS as Key Methods
- Temperature and Humidity Dependent Reliability Analysis of RGB LED Chips
- A Study of Low Leakage Failure Mechanism of X7R Multiple Layer Ceramic Capacitor (MLCC)
- A System for Electro-Mechanical Reliability Testing of MEMS Devices
- Section 9: Posters