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|a International Symposium for Testing and Failure Analysis
|n (31st :
|d 2005 :
|c San Jose, Calif.)
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|a ISTFA 2005 :
|b Proceedings of the 31st International Symposium for Testing and Failure Analysis, Movember 6-10, 2005, McEnery Convention Center, San Jose, California /
|c sponsored by EDFAS--Electronic Device Failure Analysis Society, ISTFA/2005, ASTM International.
|
260 |
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|a Materials Park, OH :
|b ASM International,
|c ©2005.
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|a 1 online resource (xviii, 524 pages) :
|b illustrations
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336 |
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
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|a Includes bibliographical references and index.
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|a Print version record.
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|a Contents -- Diffractive Lenses for High Resolution Laser Based Failure Analysis -- Dopant Imaging on Front Surface of Silicon Devices with a Coaxial Photon- Ion Column -- Newly-Developed Scanning Laser-SQUID Microscope -- Stacked-Die Failure Mechanisms for an Octal, Current Input 20-Bit Analog- to- Digital Converter -- Silver-silver versus tin-silver electrical connectors for high current and -- Analysis of Al-over-Cu Bond Pad Hillock and Pit Hole Defects -- Die Edge Thin Film Delamination on the Bottom Die of a Stacked Chip Scale Package (SCSP)
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|a Multi-Point Probing on 65nm Silicon Technology using Static IREM-based MethodologyFailure Analysis of Soft Single Column Failure in Advanced Nano SRAM Device with Internal Probing Techniques -- The Effectiveness of OBIRCH Based Fault Isolation for Sub- 90nm CMOS Technologies -- Dislocation related Leakage in Advanced CMOS devices -- Contacting Diffusion with FIB for Backside Circuit Edit � Procedures and Material Analysis -- Novel and Practical Method of Through Silicon FIB Editing of SOI Devices
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505 |
8 |
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|a The Joy of SOI: As Viewed From A Backside Focused Ion Beam (FIB) PerspectiveComplementary Optical Techniques for Advanced IC Failure Analysis � Case Study -- Scanning Optical Microscopy Application in Micron Memory Devices -- Topside Defect Localization Using OBIRCH Analysis -- Advanced electrical characterization of 90 nm Soft Bit Failure by Nano Probing technique -- Dynamic Laser Delay Variation Mapping (DVM) Implementations and Applications -- Soft Defect Localization Techniques without a Synchronization Signal to the Laser Scanning Module
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|a Guideline for interpreting IR Laser Stimulation signal on semiconductors materials and for improving failure analysis flowLock-In Assisted Soft Defect Localization (LIA-SDL) and its Application In Scan Shift Problems -- Furthering the Business Proposition of a Robust System Level Failure Analysis Framework: A Focus on Enabling Product Services -- Unique Failure Modes from use of Sn-Pb and Lead-Free (mixed metallurgies) in PCB Assembly: CASE STUDY -- Analysis Methods for Characterizing Drop Test Robustness of Lead-free FBGAÂ?s
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505 |
8 |
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|a Developing a More Inclusive System Level ESD Characterization MethodologyX-ray Fluorescence Imaging For High Resolution Elemental Mapping -- 3-D EBIC Technique using FIB and EB Double Beam System -- Case studies of the use of Image Processing in Metrology and Failure Analysis. -- Single Device Characterization by Nano- probing to Identify Failure Root Cause -- Analysis of DRAM Standby Current Failure due to Hot Electron Induced Punch-through (HEIP) of PMOS transistor -- Stacked-Die Analysis Using C-Mode Scanning Acoustic Microscope
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|a eBooks on EBSCOhost
|b EBSCO eBook Subscription Academic Collection - Worldwide
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650 |
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|a Electronics
|x Materials
|x Testing
|v Congresses.
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|a Electronic apparatus and appliances
|x Testing
|v Congresses.
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|x Materials
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|0 (OCoLC)fst00907571
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|0 (OCoLC)fst01423772
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|a ASM International.
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710 |
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|a Electronic Device Failure Analysis Society.
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776 |
0 |
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|i Print version:
|a International Symposium for Testing and Failure Analysis (31st : 2005 : San Jose, Calif.).
|t ISTFA 2005.
|d Materials Park, Ohio : ASM International, ©2005
|z 087170823X
|w (OCoLC)62723362
|
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