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Radiation effects and soft errors in integrated circuits and electronic devices /

This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative en...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Schrimpf, Ronald Donald, Fleetwood, D. M. (Dan M.)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Singapore ; New Jersey : World Scientific Pub., ©2004.
Colección:Selected topics in electronics and systems ; vol. 34.
Temas:
Acceso en línea:Texto completo

MARC

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245 0 0 |a Radiation effects and soft errors in integrated circuits and electronic devices /  |c editors, R.D. Schrimpf, D.M. Fleetwood. 
260 |a Singapore ;  |a New Jersey :  |b World Scientific Pub.,  |c ©2004. 
300 |a 1 online resource (viii, 339 pages) :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
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338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a Selected topics in electronics and systems ;  |v vol. 34 
504 |a Includes bibliographical references. 
588 0 |a Print version record. 
505 0 |a Preface; CONTENTS; Single Event Effects in Avionics and on the Ground; 1. Introduction; 2. Similarities between SEE in Avionics and on the Ground; 3. Differences Between SEE in Avionics and on the Ground; 4. Atmospheric and Ground Level Environments; 5. SEE Data in devices; 6. Summary; Soft Errors in Commercial Integrated Circuits; 1. Introduction; 2. Scaling trends for memory devices; 3. Seating trend for peripheral logic devices; 4. Conclusion; Single-Event Effects in lll-V Semiconductor Electronics; 1. Introduction; 2. Single-Event Effects in lll-V Electronic Devices. 
505 8 |a 3. Summary and ConclusionsInvestigation of Single-Event Transients in Fast Integrated Circuits with a Pulsed Laser; 1. Basic Mechanisms of a SET; 2. SET Laser Testing; 3. Experimental set-up for SET laser testing; 4. Results; 5. Conclusions; System Level Single Event Upset Mitigation Strategies; 1. Introduction; 2. Systems Engineering for Energetic Particle Environment Compatibility; 3. Fault Tolerant Systems Strategies; Radiation-Tolerant Design for High Performance Mixed-Signal Circuits; 1. Introduction; 2. Radiation Mechanisms in Mixed-Signal Integrated Circuits. 
505 8 |a 3. Process Component and Layout Choices for Hardened-by-Design Circuits4. Total Dose Hardening; 5. Single-Event Effect Hardening; 6. Dose-Rate Effect Hardening; 7. Conclusion; A Total-Dose Hardening-By-Design Approach for High-Speed Mixed-Signal CMOS Integrated Circuits; 1. Introduction; 2. Closed Geometry Transistors; 3. Circuit Application-Functional Description; 4. Performance of HBD APHY Circuit; 5. Conclusions; Radiation Issues in the New Generation of High Energy Physics Experiments; 1. Introduction; 2. The Radiation Environment; 3. SEU Rate Estimate in the LHC. 
505 8 |a 4. Radiation-Hard ASICs Design5. Conclusions; Space Radiation Effects in Optocouplers; 1.0 Introduction; 2.0 Optocoupter Types Addressed in This Paper; 3.0 Physical Mechanisms of Particle-Induced Transient Effects; 4.0 Physical Mechanisms for Permanent Degradation; 5.0 Conclusions; Radiation Effects in Charge-Coupled Device (CCD) Imagers and CMOS Active Pixel Sensors; 1. Introduction; 2. Damage due to Total Ionizing Dose (TTD); 3. Displacement Damage; 4. Transient Events; 5. Future Work; The Effects of Space Radiation Exposure on Power MOSFETs: A Review; 1. Introduction. 
505 8 |a 2. Power MOSFET Technotogies3. Total Dose Ionizing Radiation Effects on Power MOSFETs; 4. Single Event Radiation Effects; 5. Conclusions; Introduction to SOI MOSFETs: Context Radiation Effects and Future Trends; 1. Introduction; 2. Current Status of SOI Technology; 3. Operation Mechanisms in SOI MOSFETs; 4. Radiation Effects on SOI MOSFETs; 5. Future Trends; 6. Conclusions; Total-Dose and Single-Event Effects in Silicon-Germanium Heterojunction Bipolar Transistors; 1. Introduction; 2. The SiGe HBT; 3. Radiation Response of SiGe HBTs; 4. SiGe HBT Circuit Tolerance. 
520 |a This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes th. 
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650 0 |a Electronic circuits  |x Effect of radiation on. 
650 0 |a Integrated circuits  |x Effect of radiation on. 
650 6 |a Circuits électroniques  |x Effets du rayonnement sur. 
650 7 |a TECHNOLOGY & ENGINEERING  |x Electronics  |x Circuits  |x Integrated.  |2 bisacsh 
650 7 |a TECHNOLOGY & ENGINEERING  |x Electronics  |x Circuits  |x General.  |2 bisacsh 
650 7 |a Integrated circuits  |x Effect of radiation on  |2 fast 
700 1 |a Schrimpf, Ronald Donald. 
700 1 |a Fleetwood, D. M.  |q (Dan M.) 
776 0 8 |i Print version:  |t Radiation effects and soft errors in integrated circuits and electronic devices.  |d Singapore ; New Jersey : World Scientific Pub., ©2004  |w (DLC) 2006273469 
830 0 |a Selected topics in electronics and systems ;  |v vol. 34. 
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