Advanced high speed devices /

Mostrar otras versiones (1)

Advanced High Speed Devices covers five areas of advanced device technology : terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and th...

Descripción completa

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores Corporativos: World Scientific (Firm), IEEE/Cornell Conference on High Performance Devices
Otros Autores: Shur, Michael, Maki, Paul
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Singapore ; Hackensack, N.J. : World Scientific Pub. Co., ©2010.
Colección:Selected topics in electronics and systems ; v. 51.
Temas:
Very high speed integrated circuits > Congresses.
Semiconductors > Congresses.
Transistors > Congresses.
Integrated circuits > Very large scale integration > Congresses.
Circuits intégrés à très grande vitesse > Congrès.
Semi-conducteurs > Congrès.
Transistors > Congrès.
Circuits intégrés à très grande échelle > Congrès.
TECHNOLOGY & ENGINEERING > Electronics > Circuits > Integrated.
TECHNOLOGY & ENGINEERING > Electronics > Circuits > General.
Integrated circuits > Very large scale integration.
Semiconductors.
Transistors.
Very high speed integrated circuits.
Conference papers and proceedings.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Simulation and experimental results on GaN based ultra-short planar negative differential conductivity diodes for THz power generation / B. Aslan, L.F. Eastman and Q. Diduck
  • 5-terminal THz GaN based transistor with field- and space-charge control electrodes / G. Simin, M.S. Shur and R. Gaska
  • Performance comparison of scaled III-V and Si ballistic nanowire MOSFETs / L. Wang [and others]
  • A room temperature ballistic deflection transistor for high performance applications / Q. Diduck, H. Irie and M. Margala
  • Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's / T. Otsuji [and others]
  • Millimeter wave to terahertz in CMOS / K.K. O, S. Sankaran [and others]
  • The effects of increasing AlN mole fraction on the performance of AlGaN active regions containing nanometer scale compositionally inhomogeneities / A.V. Sampath [and others]
  • Surface acoustic wave propagation in GaN-On-sapphire under pulsed sub-band ultraviolet illumination / V.S. Chivukula [and others]
  • Solar-blind single-photon 4H-SiC avalanche photodiodes / A. Vert [and others]
  • Monte Carlo simulations of In[symbol]Ga[symbol]As MOSFETs at 0.5 V supply voltage for high-performance CMOS / J.S. Ayubi-Moak, K. Kalna and A. Asenov
  • The first 70nm 6-inch GaAs PHEMT MMIC process / H. Karimy [and others]
  • High-performance 50-nm metamorphic high electron-mobility transistors with high breakdown voltages / D. Xu [and others]
  • MBE growth and characterization of Mg-doped III-nitrides on sapphire / X. Chen [and others]
  • Performance of MOSFETs on reactive-ion-etched GaN surfaces / K. Tang, W. Huang, T.P. Chow
  • High current density/high voltage AlGaN/GaN HFETs on sapphire / J. Shi, M. Pophristic and L.F. Eastman
  • InAlN/GaN MOS-HEMT with thermally grown oxide / M. Alomari [and others]
  • GaN transistors for power switching and millimeter-wave applications / T. Ueda [and others]
  • 4-nm AlN barrier all binary HFET with SiNx gate dielectric / T. Zimmermann [and others]
  • Effect of gate oxide processes on 4H-SiC MOSFETs on (000-1) oriented substrate / H. Naik, K. Tang and T.P. Chow
  • Characterization and modeling of integrated diode in 1.2kV 4H-SiC vertical power MOSFET / H. Naik, Y. Wang and T.P. Chow
  • Packaging and wide-pulse switching of 4 mm x 4 mm silicon carbide GTOs / H. O'Brien and M.G. Koebke
  • Bi-directional scalable solid-state circuit breakers for hybrid-electric vehicles / D.P. Urciuoli and V. Veliadis.

Ejemplares similares