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|a Kozlovskiĭ, V. V.
|q (Vitaliĭ Vasilʹevich)
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|a Radiation defect engineering /
|c Kozlovski Vitali, Abrosimova Vera.
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|a New Jersey ;
|a London :
|b World Scientific,
|c ©2005.
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|a 1 online resource (viii, 253 pages) :
|b illustrations.
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|a Selected topics in electronics and systems ;
|v v. 37
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|a Includes bibliographical references and index.
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|a Print version record.
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|a Preface; Contents; 1 Ion-S timulated Processes; 2 Transmutation Doping of Semiconductors by Charged Particles; 3 Doping of Semiconductors Using Radiation Defects; 4 Formation of Buried Porous and Damaged Layers; References; Index.
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|a The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials.
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546 |
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|a English.
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|a eBooks on EBSCOhost
|b EBSCO eBook Subscription Academic Collection - Worldwide
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|a Semiconductor doping.
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|a Semiconductors
|x Effect of radiation on.
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|a Semi-conducteurs
|x Dopage.
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|a Semi-conducteurs
|x Effets du rayonnement sur.
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|a TECHNOLOGY & ENGINEERING
|x Electronics
|x Solid State.
|2 bisacsh
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|a TECHNOLOGY & ENGINEERING
|x Electronics
|x Semiconductors.
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|a Semiconductor doping
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|a Semiconductors
|x Effect of radiation on
|2 fast
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|a Abrosimova, Vera.
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|a International journal of high speed electronics and systems.
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776 |
0 |
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|i Print version:
|a Kozlovskiĭ, V.V. (Vitaliĭ Vasilʹevich).
|t Radiation defect engineering.
|d New Jersey ; London : World Scientific, ©2005
|z 9812565213
|w (DLC) 2006283955
|w (OCoLC)64096752
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830 |
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|a Selected topics in electronics and systems ;
|v v. 37.
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856 |
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