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Radiation defect engineering /
The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modifi...
| Clasificación: | Libro Electrónico |
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| Autor principal: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New Jersey ; London :
World Scientific,
©2005.
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| Colección: | Selected topics in electronics and systems ;
v. 37. |
| Temas: | |
| Acceso en línea: | Texto completo |
| Sumario: | The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials. |
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| Descripción Física: | 1 online resource (viii, 253 pages) : illustrations. |
| Bibliografía: | Includes bibliographical references and index. |
| ISBN: | 9812703195 9789812703194 9789812565211 9812565213 1281899178 9781281899170 9786611899172 6611899170 |