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Oxide reliability : a summary of silicon oxide wearout, breakdown, and reliability /
Annotation This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
[River Edge, NJ] :
World Scientific,
©2002.
|
| Colección: | Selected topics in electronics and systems ;
v. 23. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 245 | 0 | 0 | |a Oxide reliability : |b a summary of silicon oxide wearout, breakdown, and reliability / |c editor, D.J. Dumin. |
| 260 | |a [River Edge, NJ] : |b World Scientific, |c ©2002. | ||
| 300 | |a 1 online resource (ix, 270 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Selected topics in electronics and systems ; |v v. 23 | |
| 504 | |a Includes bibliographical references. | ||
| 588 | 0 | |a Print version record. | |
| 520 | 8 | |a Annotation This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field. | |
| 505 | 0 | |a Oxide wearout, breakdown, and reliability / D.J. Dumin -- Reliability of flash nonvolatile memories / N. Mielke and J. Chen -- Physics and chemistry of intrinsic time-dependent dielectric breakdown in SiO2 dielectrics / J.W. McPherson -- Breakdown modes and breakdown statistics of ultrathin SiO2 gate oxides / J. Sune, D. Jimenez, and E. Miranda -- MOSFET gate oxide reliability: Anode hole injection model and its applications / Y.-C. Yeo, Q. Lu, and C. Hu. | |
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 650 | 0 | |a Metal oxide semiconductors |x Reliability. | |
| 650 | 0 | |a Silicon oxide |x Deterioration. | |
| 650 | 6 | |a MOS (Électronique) |x Fiabilité. | |
| 650 | 6 | |a Silice |x Détérioration. | |
| 650 | 7 | |a COMPUTERS |x Machine Theory. |2 bisacsh | |
| 650 | 7 | |a COMPUTERS |x Computer Engineering. |2 bisacsh | |
| 650 | 7 | |a COMPUTERS |x Hardware |x General. |2 bisacsh | |
| 650 | 7 | |a Metal oxide semiconductors |x Reliability |2 fast | |
| 700 | 1 | |a Dumin, D. J. | |
| 776 | 0 | 8 | |i Print version: |t Oxide reliability. |d [River Edge, NJ] : World Scientific, ©2002 |z 9810248423 |z 9789810248420 |w (DLC) 2002279812 |w (OCoLC)49996738 |
| 830 | 0 | |a Selected topics in electronics and systems ; |v v. 23. | |
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