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Crystal growth and characterization of advanced materials : proceedings of the International School on Crystal Growth and Characterization of Advanced Materials, La Habana, Cuba, November 30-December 10, 1987 /
This volume contains the the Proceedings of the International School on Crystal Growth and Characterization of Advanced Materials that was held at La Habana University, Cuba, from 30 November to 10 December 1987. Lectures were delivered on various aspects of crystal growth, crystal characterization...
| Clasificación: | Libro Electrónico |
|---|---|
| Autores Corporativos: | , |
| Otros Autores: | |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore ; Teaneck, NJ :
World Scientific,
1988.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Fundamentals and techniques. Fundamental aspects of crystal growth from the melt / C. Paorici & L. Zanotti
- Phase diagrams / A.N. Christensen
- Phase diagrams in crystal growth / A.N. Christensen
- Growth procedures and perfection of semiconductor materials / A. Lindegaard-Andersen
- Floating zone crystal growth / A.N. Christensen
- Cold crucible and skull melting growth methods / A.N. Christensen
- Atomistic aspects of crystal growth and epitaxy / I. Markov
- Fundamental aspects and vapour phase epitaxial techniques of ternary compounds and its alloys / F. Leccabue & C. Pelosi
- Fundamentals of liquid-phase epitaxial growth / P. Kordos
- Physics and technology of microstructures in solids: Motivation for molecular beam epitaxy / A. Zehe
- Art and routine of MBE-growth / A. Zehe
- Materials: Characterization and applications. Diffraction methods in materials science / Th. Hahn
- Characterization of semiconductor crystals and device materials by x-ray topography / A. Lindegaard-Andersen
- Equilibrium carrier density and solubility of group V dopants in silicon / D. Nobili
- Silicon-MBE and microelectronics / A. Zehe
- Determination of few selected basic parameter at the investigation of AIII-BV semiconductors using x-ray methods / H.-G. Bruhl
- Investigation of (Ga, In) (As, P)/InP single heterostructures by means of extremely asymmetrical Bragg diffraction using synchrotron radiation / H.-G. Bruhl
- Characterization of Ga[symbols]/GaAs superlattices by x-ray diffraction / H.-G. Bruhl
- Physical aspects of very high photovoltaic concentration: Lesson 1
- Physical foundations of solar cells / A. Luque
- Physical aspects of very high photovoltaic concentration: Lesson 2
- Efficiency limits in concentrating solar cells / A. Luque
- Physical aspects of very high photovoltaic concentration: Lesson 3
- Optical and thermal considerations of very high concentration cells / A. Luque
- Multijunction solar cells / I. Chambouleyron
- Variable band-gap amorphous semiconductors / I. Chambouleyron
- Application of the Mossbauer spectroscopy to the study of magnetic materials / G. Albanese
- Metallic magnetism in modern materials / D. Givord.