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Silicon RF power MOSFETS /
The world-wide proliferation of cellular networks has revolutionizedtelecommunication systems. The transition from Analog to Digital RFtechnology enabled substantial increase in voice traffic usingavailable spectrum, and subsequently the delivery of digitally basedtext messaging, graphics and even s...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore ; Hackensack, NJ :
World Scientific,
©2005.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 100 | 1 | |a Baliga, B. Jayant, |d 1948- | |
| 245 | 1 | 0 | |a Silicon RF power MOSFETS / |c B. Jayant Baliga. |
| 260 | |a Singapore ; |a Hackensack, NJ : |b World Scientific, |c ©2005. | ||
| 300 | |a 1 online resource (xvi, 302 pages) : |b illustrations (some color) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a data file |2 rda | ||
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Preface; Contents; Chapter 1 Introduction; Chapter 2 RF Power Amplifiers; Chapter 3 MOSFET PHYSICS; Chapter 4 Lateral-Diffused MOSFETs; Chapter 5 Vertical-Diffused MOSFETs; Chapter 6 Charge-Coupled MOSFETs; Chapter 7 Super-Linear MOSFETs; Chapter 8 Planar Super-Linear MOSFETs; Chapter 9 Dual Trench MOSFETs; Chapter 10 Hot Carrier Injection Instability; Chapter 11 Synopsis; Appendix; Index. | |
| 520 | |a The world-wide proliferation of cellular networks has revolutionizedtelecommunication systems. The transition from Analog to Digital RFtechnology enabled substantial increase in voice traffic usingavailable spectrum, and subsequently the delivery of digitally basedtext messaging, graphics and even streaming video. | ||
| 546 | |a English. | ||
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 650 | 0 | |a Metal oxide semiconductor field-effect transistors. | |
| 650 | 0 | |a Field-effect transistors. | |
| 650 | 6 | |a Transistors MOSFET. | |
| 650 | 6 | |a Transistors à effet de champ. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Transistors. |2 bisacsh | |
| 650 | 7 | |a Field-effect transistors |2 fast | |
| 650 | 7 | |a Metal oxide semiconductor field-effect transistors |2 fast | |
| 776 | 0 | 8 | |i Print version: |a Baliga, B. Jayant, 1948- |t Silicon RF power MOSFETS. |d Singapore ; Hackensack, NJ : World Scientific, ©2005 |w (DLC) 2005296210 |
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