Wide energy bandgap electronic devices /
A presentation of state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, rf base station infrastructure and high temperature electronics. It includes results on InGaAsN devices, which constitute a very promising area for low power el...
Clasificación: | Libro Electrónico |
---|---|
Otros Autores: | Ren, Fan, Zolper, J. C. |
Formato: | Electrónico eBook |
Idioma: | Inglés |
Publicado: |
River Edge, N.J. :
World Scientific,
©2003.
|
Temas: | |
Acceso en línea: | Texto completo |
Ejemplares similares
-
Properties of gallium arsenide /
Publicado: (1996) -
GaAs high-speed devices : physics, technology, and circuit applications /
por: Chang, C. Y., 1937-
Publicado: (1994) -
Fabrication of GaAs devices /
por: Baca, A. G.
Publicado: (2009) -
Wide bandgap semiconductor-based electronics /
Publicado: (2020) -
Properties of lattice-matched and strained indium gallium arsenide /
Publicado: (1993)