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Wide energy bandgap electronic devices /
A presentation of state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, rf base station infrastructure and high temperature electronics. It includes results on InGaAsN devices, which constitute a very promising area for low power el...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
River Edge, N.J. :
World Scientific,
©2003.
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| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 245 | 0 | 0 | |a Wide energy bandgap electronic devices / |c [edited by] Fan Ren, John C. Zolper. |
| 260 | |a River Edge, N.J. : |b World Scientific, |c ©2003. | ||
| 300 | |a 1 online resource (x, 514 pages) : |b illustrations (some color) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 520 | |a A presentation of state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, rf base station infrastructure and high temperature electronics. It includes results on InGaAsN devices, which constitute a very promising area for low power electronics. | ||
| 505 | 0 | |a Preface ; 1. Growth of III-Nitride Semiconductors and Their Characterization ; 1. Introduction ; 2. Substrates Growth Methods and Growth Experiments ; 2.1. Primer on Substrates ; 3. Nitride Growth Techniques ; 3.1. MBE ; 3.2. Vapor Phase Epitaxy | |
| 505 | 8 | |a 4. Growth of Nitrides by Various Techniques 4.1. Growth by MBE ; 4.2. Growth by HVPE ; 4.3. Growth by MOCVD ; 5. Conclusions ; Acknowledgments ; References ; 2. GaN and AlGaN High Voltage Power Rectifiers ; 1. Introduction | |
| 505 | 8 | |a 2. GaN Schottky Rectifiers with 3.1 kV Reverse Breakdown Voltage 3. AlGaN Schottky Rectifiers with 4.1 kV Reverse Breakdown Voltage ; 4. Temperature Dependence and Current Transport Mechanisms in AlxGa1-xN Schottky Rectifiers | |
| 505 | 8 | |a 5. Lateral AlxGa1-xN Power Rectifiers with 9.7 kV Reverse Breakdown Voltage 6. Vertical and Lateral GaN Rectifiers on Free-Standing GaN Substrates ; 7. Comparison of GaN p-i-n and Schottky Rectifiers Performance ; Acknowledgments ; References | |
| 505 | 8 | |a 3. GaN-Based Power High Electron Mobility Transistors 1. Introduction ; 1.1. Power versus Small-Signal HEMT ; 2. Device Structures and Fabrication ; 2.1. Basic Device Structure ; 2.2. Improved Device Structures ; 2.3. Device Fabrication ; 3. Characteristics ; 3.1. DC Characteristics | |
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 650 | 0 | |a Wide gap semiconductors. | |
| 650 | 0 | |a Power semiconductors. | |
| 650 | 0 | |a Gallium arsenide semiconductors. | |
| 650 | 0 | |a Silicon carbide. | |
| 650 | 0 | |a Gallium arsenide. | |
| 650 | 6 | |a Semi-conducteurs à large bande interdite. | |
| 650 | 6 | |a Semi-conducteurs de puissance. | |
| 650 | 6 | |a Arséniure de gallium. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a Gallium arsenide |2 fast | |
| 650 | 7 | |a Gallium arsenide semiconductors |2 fast | |
| 650 | 7 | |a Power semiconductors |2 fast | |
| 650 | 7 | |a Silicon carbide |2 fast | |
| 650 | 7 | |a Wide gap semiconductors |2 fast | |
| 700 | 1 | |a Ren, Fan. | |
| 700 | 1 | |a Zolper, J. C. | |
| 776 | 0 | 8 | |i Print version: |t Wide energy bandgap electronic devices. |d River Edge, N.J. : World Scientific, ©2003 |z 9812382461 |z 9789812382467 |w (DLC) 2003041123 |w (OCoLC)51518335 |
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