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Multigroup equations for the description of the particle transport in semiconductors /

Deterministic simulation of the particle transport in semiconductor devices is an interesting alternative to the common Monte Carlo approach. In this book, a state-of-the-art technique called the multigroup approach is presented and applied to a variety of transport problems in bulk semiconductors a...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Galler, Martin, 1977-
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Hackensack, N.J. : World Scientific, ©2005.
Colección:Series on advances in mathematics for applied sciences ; v. 70.
Temas:
Acceso en línea:Texto completo

MARC

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100 1 |a Galler, Martin,  |d 1977- 
245 1 0 |a Multigroup equations for the description of the particle transport in semiconductors /  |c Martin Galler. 
260 |a Hackensack, N.J. :  |b World Scientific,  |c ©2005. 
300 |a 1 online resource (xi, 228 pages) :  |b illustrations 
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490 1 |a Series on advances in mathematics for applied sciences ;  |v v. 70 
504 |a Includes bibliographical references (pages 217-223) and index. 
588 0 |a Print version record. 
505 0 |a Preface; Contents; 1. Introduction; 2. The Bloch-Boltzmann-Peierls Equations; 3. Multigroup Model Equations for Polar Semiconductors; 4. Particle Transport in Indium Phosphide; 5. Particle Transport in Gallium Arsenide; 6. Multigroup Equations for Degenerated Carrier Gases; 7. The Two-dimensional Electron Gas; 8. The Multigroup-WENO Solver for Semiconductor Device Simulation; 9. Simulation of Silicon Devices; 10. Simulation of Gallium Arsenide Devices; 11. Conclusion; Bibliography; Related Publications of the Author; Index. 
520 |a Deterministic simulation of the particle transport in semiconductor devices is an interesting alternative to the common Monte Carlo approach. In this book, a state-of-the-art technique called the multigroup approach is presented and applied to a variety of transport problems in bulk semiconductors and semiconductor devices. High-field effects as well as hot-phonon phenomena in polar semiconductors are studied in detail. The mathematical properties of the presented numerical method are studied, and the method is applied to simulating the transport of a two-dimensional electron gas formed at a s. 
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650 0 |a Transport theory  |x Mathematics. 
650 0 |a Semiconductors  |x Mathematics. 
650 6 |a Théorie du transport  |x Mathématiques. 
650 6 |a Semi-conducteurs  |x Mathématiques. 
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830 0 |a Series on advances in mathematics for applied sciences ;  |v v. 70. 
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