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Breakdown phenomena in semiconductors and semiconductor devices /
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to pr...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New Jersey ; London :
World Scientific,
©2005.
|
| Colección: | Selected topics in electronics and systems ;
v. 36. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 100 | 1 | |a Levinshteĭn, M. E. |q (Mikhail Efimovich) | |
| 245 | 1 | 0 | |a Breakdown phenomena in semiconductors and semiconductor devices / |c Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein. |
| 260 | |a New Jersey ; |a London : |b World Scientific, |c ©2005. | ||
| 300 | |a 1 online resource (xiii, 208 pages) : |b illustrations | ||
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| 347 | |a data file | ||
| 490 | 1 | |a Selected topics in electronics and systems ; |v v. 36 | |
| 504 | |a Includes bibliographical references and indexes. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Preface; Contents; Chapter 1 Introductory Chapter; Chapter 2 Avalanche Multiplication; Chapter 3 Static Avalanche Breakdown; Chapter 4 Avalanche Injection; Chapter 5 Dynamic Breakdown; Conclusion; List of Symbols; Bibliography; Index; AUTHOR INDEX. | |
| 520 | |a Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi. | ||
| 546 | |a English. | ||
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 650 | 0 | |a Semiconductors. | |
| 650 | 0 | |a Breakdown (Electricity) | |
| 650 | 0 | |a High voltages. | |
| 650 | 6 | |a Semi-conducteurs. | |
| 650 | 6 | |a Rupture diélectrique. | |
| 650 | 6 | |a Haute tension. | |
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| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
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| 650 | 7 | |a High voltages |2 fast | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 700 | 1 | |a Kostamovaara, Juha. | |
| 700 | 1 | |a Vainshtein, Sergey. | |
| 776 | 0 | 8 | |i Print version: |a Levinshteĭn, M.E. (Mikhail Efimovich). |t Breakdown phenomena in semiconductors and semiconductor devices. |d New Jersey ; London : World Scientific, ©2005 |z 9812563954 |w (DLC) 2006273468 |w (OCoLC)62473250 |
| 830 | 0 | |a Selected topics in electronics and systems ; |v v. 36. | |
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