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|a Arora, N.
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|a Mosfet modeling for VLSI simulation :
|b theory and practice /
|c Narain Arora.
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|a New Jersey :
|b World Scientific,
|c ©2007.
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|a 1 online resource (xxiii, 605 pages) :
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|a International series on advances in solid state electronics and technology
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|a Includes bibliographical references and index.
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|a Foreword; Preface; Contents; List of Symbols; Acronyms; 1 Overview; 2 Review of Basic Semiconductor and pn Junction Theory; 3 MOS Transistor Structure and Operation; 4 MOS Capacitor; 5 Threshold Voltage; 6 MOSFET DC Model; 7 Dynamic Model; 8 Modeling Hot-Carrier Effects; 9 Data Acquisition and Model Parameter Measurements; 10 Model Parameter Extraction Using Optimization Method; 11 SPICE Diode and MOSFET Models and Their Parameters; 12 Statistical Modeling and Worst-case Design Parameters; Appendix A. Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300K.
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|a A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required.
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|a Metal oxide semiconductor field-effect transistors.
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|a Integrated circuits
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|i Print version:
|a Arora, N. (Narain), 1943-
|t Mosfet modeling for VLSI simulation.
|d New Jersey : World Scientific, ©2007
|z 9789812568625
|z 981256862X
|w (DLC) 2007278691
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