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Mosfet modeling for VLSI simulation : theory and practice /

A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Arora, N. (Narain), 1943-
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New Jersey : World Scientific, ©2007.
Colección:International series on advances in solid state electronics and technology.
Temas:
Acceso en línea:Texto completo

MARC

LEADER 00000cam a2200000 a 4500
001 EBSCO_ocn173612115
003 OCoLC
005 20231017213018.0
006 m o d
007 cr cnu---unuuu
008 071002s2007 njua ob 001 0 eng d
040 |a N$T  |b eng  |e pn  |c N$T  |d YDXCP  |d OCLCQ  |d IDEBK  |d OCLCQ  |d MERUC  |d OCLCQ  |d OCLCO  |d OCLCQ  |d OCLCF  |d NLGGC  |d OCLCQ  |d EBLCP  |d OCLCQ  |d AGLDB  |d ZCU  |d UAB  |d U3W  |d OCLCQ  |d VTS  |d ICG  |d INT  |d VT2  |d OCLCQ  |d COO  |d WYU  |d JBG  |d OCLCQ  |d STF  |d DKC  |d OCLCQ  |d M8D  |d UKAHL  |d OCLCQ  |d AJS  |d OCLCO  |d OCLCQ 
019 |a 173485448  |a 1055380809  |a 1065072870  |a 1081293651  |a 1086972982  |a 1228554401 
020 |a 9789812707581  |q (electronic bk.) 
020 |a 9812707581  |q (electronic bk.) 
020 |z 9789812568625 
020 |z 981256862X 
029 1 |a AU@  |b 000050968621 
029 1 |a AU@  |b 000051396316 
029 1 |a DEBBG  |b BV043146339 
029 1 |a DEBBG  |b BV044126805 
029 1 |a DEBSZ  |b 422183164 
035 |a (OCoLC)173612115  |z (OCoLC)173485448  |z (OCoLC)1055380809  |z (OCoLC)1065072870  |z (OCoLC)1081293651  |z (OCoLC)1086972982  |z (OCoLC)1228554401 
050 4 |a TK7871.95  |b .A763 2007eb 
072 7 |a TEC  |x 008110  |2 bisacsh 
082 0 4 |a 621.3815/284  |2 22 
049 |a UAMI 
100 1 |a Arora, N.  |q (Narain),  |d 1943- 
245 1 0 |a Mosfet modeling for VLSI simulation :  |b theory and practice /  |c Narain Arora. 
260 |a New Jersey :  |b World Scientific,  |c ©2007. 
300 |a 1 online resource (xxiii, 605 pages) :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a International series on advances in solid state electronics and technology 
504 |a Includes bibliographical references and index. 
588 0 |a Print version record. 
505 0 |a Foreword; Preface; Contents; List of Symbols; Acronyms; 1 Overview; 2 Review of Basic Semiconductor and pn Junction Theory; 3 MOS Transistor Structure and Operation; 4 MOS Capacitor; 5 Threshold Voltage; 6 MOSFET DC Model; 7 Dynamic Model; 8 Modeling Hot-Carrier Effects; 9 Data Acquisition and Model Parameter Measurements; 10 Model Parameter Extraction Using Optimization Method; 11 SPICE Diode and MOSFET Models and Their Parameters; 12 Statistical Modeling and Worst-case Design Parameters; Appendix A. Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300K. 
520 |a A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required. 
590 |a eBooks on EBSCOhost  |b EBSCO eBook Subscription Academic Collection - Worldwide 
650 0 |a Metal oxide semiconductor field-effect transistors. 
650 0 |a Integrated circuits  |x Very large scale integration. 
650 0 |a Integrated circuits  |x Very large scale integration  |x Computer simulation. 
650 6 |a Transistors MOSFET. 
650 6 |a Circuits intégrés à très grande échelle. 
650 6 |a Circuits intégrés à très grande échelle  |x Simulation par ordinateur. 
650 7 |a TECHNOLOGY & ENGINEERING  |x Electronics  |x Transistors.  |2 bisacsh 
650 7 |a Integrated circuits  |x Very large scale integration.  |2 fast  |0 (OCoLC)fst00975602 
650 7 |a Integrated circuits  |x Very large scale integration  |x Computer simulation.  |2 fast  |0 (OCoLC)fst00975603 
650 7 |a Metal oxide semiconductor field-effect transistors.  |2 fast  |0 (OCoLC)fst01017614 
776 0 8 |i Print version:  |a Arora, N. (Narain), 1943-  |t Mosfet modeling for VLSI simulation.  |d New Jersey : World Scientific, ©2007  |z 9789812568625  |z 981256862X  |w (DLC) 2007278691  |w (OCoLC)171615086 
830 0 |a International series on advances in solid state electronics and technology. 
856 4 0 |u https://ebsco.uam.elogim.com/login.aspx?direct=true&scope=site&db=nlebk&AN=203861  |z Texto completo 
938 |a Askews and Holts Library Services  |b ASKH  |n AH24684145 
938 |a EBL - Ebook Library  |b EBLB  |n EBL312290 
938 |a EBSCOhost  |b EBSC  |n 203861 
938 |a YBP Library Services  |b YANK  |n 2706195 
994 |a 92  |b IZTAP