AlN base layers for UV LEDs

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Walde, Sebastian (Autor)
Formato: Electrónico eBook
Idioma:Inglés
Alemán
Publicado: Göttingen : Cuvillier Verlag, 2021.
Colección:Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ; Bd. 66.
Temas:
Electronic apparatus and appliances > Dissertations.
Light emitting diodes > Dissertations.
Nitrides > Electric properties > Dissertations.
Diodes électroluminescentes > Thèses et écrits académiques.
Electronic apparatus and appliances
Light emitting diodes
Academic theses
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Intro
  • Introduction and Motivation
  • CHAPTER 1 Experimental methods
  • 1.1 Heteroepitaxial growth of AlN on sapphire
  • 1.2 AlN templates as UV LED base layers
  • 1.3 State of research
  • CHAPTER 2 Experimental methods
  • 2.1 Sample fabrication
  • 2.2 Characterisation methods
  • 2.3 Method for light extraction simulations
  • CHAPTER 3 High temperature annealing of MOVPE grown AlN
  • 3.1 Annealing of 350 nm thick AlN
  • 3.2 Annealing of layer thickness series
  • 3.3 Variation of the annealing parameters
  • CHAPTER 4 Nanopatterned sapphire substrates
  • 4.1 Light extraction simulations of nanopatternedinterface
  • 4.2 Growth on sapphire nanopillars
  • 4.3 Growth on sapphire nanoholes
  • CHAPTER 5 UVC LED performance on the developed AlN templates
  • Conclusion
  • APPENDIX A.

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