Epitaxial Design Optimizations for Increased Efficiency in GaAs-Based High Power Diode Lasers

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Kaul, Thorben
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Göttingen : Cuvillier Verlag, 2021.
Colección:Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik.
Temas:
Semiconductor lasers.
Diodes.
Lasers à semi-conducteurs.
Diodes
Semiconductor lasers
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Intro
  • Contents
  • List of Publications
  • Abstract
  • Kurzfassung
  • 1 Introduction
  • 1.1 Structure and method of this work
  • 2 Fundamentals
  • 2.1 Laser technology and market context
  • 2.2 Fabrication technology
  • 2.3 Mathematical framework of semiconductor lasers
  • 2.4 Parameters for characterization of broad area diode lasers
  • 2.5 Simulation tools
  • 2.6 Device configurations and measurement setups
  • 3 Literature Review, Prior State of the Art and Target Specifications
  • 3.1 Power and efficiency limiting effects
  • an overview
  • 3.2 Target specifications
  • 3.3 Prior state of the art high power diode lasers and laser bars
  • 4 Novel Epitaxial Layer-Stack Design for Increased Efficiency
  • 4.1 General epitaxial design considerations
  • 4.2 Prior state of the art epitaxial design concepts and their limits
  • 4.3 ETAS: The novel extreme triple asymmetric design concept
  • 5 Diagnosis and Analysis of Power Limiting Mechanisms
  • 5.1 Devices designed and used for diagnosis
  • 5.2 Quantifying thermal- and bias-driven contributions to rollover
  • 5.3 Bias-driven power limitations
  • 5.4 Thermal-driven power limitations
  • 6 Performance of Diode Lasers Using Optimized VerticalDesigns
  • 6.1 Impact of optical confinement on T0 and T1
  • 6.2 Measurement results of diode laser bars
  • 6.3 Short-term perspective for further improved performance
  • 7 Conclusion and Outlook
  • 7.1 The role of optical loss in thermal power saturation
  • 7.2 The role of internal differential quantum efficiency in thermal power saturation
  • 7.3 Performance of optimized devices using the novel ETAS design
  • 7.4 Outlook
  • 8 Acknowledgements
  • A Appendix
  • B List of Abbreviations
  • Bibliography.

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