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Epitaxial Design Optimizations for Increased Efficiency in GaAs-Based High Power Diode Lasers

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Kaul, Thorben
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Göttingen : Cuvillier Verlag, 2021.
Colección:Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik.
Temas:
Acceso en línea:Texto completo

MARC

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100 1 |a Kaul, Thorben. 
245 1 0 |a Epitaxial Design Optimizations for Increased Efficiency in GaAs-Based High Power Diode Lasers  |h [electronic resource]. 
260 |a Göttingen :  |b Cuvillier Verlag,  |c 2021. 
300 |a 1 online resource (137 p.). 
490 1 |a Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ;  |v v.62 
500 |a Description based upon print version of record. 
505 0 |a Intro -- Contents -- List of Publications -- Abstract -- Kurzfassung -- 1 Introduction -- 1.1 Structure and method of this work -- 2 Fundamentals -- 2.1 Laser technology and market context -- 2.2 Fabrication technology -- 2.3 Mathematical framework of semiconductor lasers -- 2.4 Parameters for characterization of broad area diode lasers -- 2.5 Simulation tools -- 2.6 Device configurations and measurement setups -- 3 Literature Review, Prior State of the Art and Target Specifications -- 3.1 Power and efficiency limiting effects -- an overview -- 3.2 Target specifications -- 3.3 Prior state of the art high power diode lasers and laser bars -- 4 Novel Epitaxial Layer-Stack Design for Increased Efficiency -- 4.1 General epitaxial design considerations -- 4.2 Prior state of the art epitaxial design concepts and their limits -- 4.3 ETAS: The novel extreme triple asymmetric design concept -- 5 Diagnosis and Analysis of Power Limiting Mechanisms -- 5.1 Devices designed and used for diagnosis -- 5.2 Quantifying thermal- and bias-driven contributions to rollover -- 5.3 Bias-driven power limitations -- 5.4 Thermal-driven power limitations -- 6 Performance of Diode Lasers Using Optimized VerticalDesigns -- 6.1 Impact of optical confinement on T0 and T1 -- 6.2 Measurement results of diode laser bars -- 6.3 Short-term perspective for further improved performance -- 7 Conclusion and Outlook -- 7.1 The role of optical loss in thermal power saturation -- 7.2 The role of internal differential quantum efficiency in thermal power saturation -- 7.3 Performance of optimized devices using the novel ETAS design -- 7.4 Outlook -- 8 Acknowledgements -- A Appendix -- B List of Abbreviations -- Bibliography. 
590 |a ProQuest Ebook Central  |b Ebook Central Academic Complete 
650 0 |a Semiconductor lasers. 
650 0 |a Diodes. 
650 6 |a Lasers à semi-conducteurs. 
650 6 |a Diodes. 
650 7 |a Diodes  |2 fast 
650 7 |a Semiconductor lasers  |2 fast 
776 0 8 |i Print version:  |a Kaul, Thorben  |t Epitaxial Design Optimizations for Increased Efficiency in GaAs-Based High Power Diode Lasers  |d Göttingen : Cuvillier Verlag,c2021  |z 9783736973961 
830 0 |a Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik. 
856 4 0 |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=6551142  |z Texto completo 
938 |a ProQuest Ebook Central  |b EBLB  |n EBL6551142 
938 |a YBP Library Services  |b YANK  |n 302067445 
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