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|a Recent advances in dielectric materials /
|c Ai Huang, editor.
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|a New York :
|b Nova Science Publishers,
|c c2009.
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|a 1 online resource
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336 |
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|a text
|b txt
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|b c
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|a online resource
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|a Includes bibliographical references and index.
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588 |
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|a Description based on print version record and CIP data provided by publisher.
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|a ""RECENT ADVANCES IN DIELECTRIC MATERIALS""; ""RECENT ADVANCES IN DIELECTRIC MATERIALS ""; ""CONTENTS""; ""PREFACE ""; ""LOW-K NANOPOROUS INTERDIELECTRICS:MATERIALS, THIN FILM FABRICATIONS,STRUCTURES AND PROPERTIES""; ""Abstract""; ""I. Introduction""; ""II. Recent Developments in Low-k Nanoporous Dielectrics""; ""III. Characterization of Pore Structures""; ""IV. Conclusions""; ""References""; ""DIELECTRIC MATERIALS: INTRODUCTION,RESEARCH AND APPLICATIONS""; ""Abstract""; ""1. Introduction""; ""2. Classification of Dielectrics""; ""3. History""; ""4. Dielectric Response of Materials""
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|a ""5. Dielectric Spectroscopy""""6. Synthesis of Different Dielectric Materials""; ""7. Characterization Techniques""; ""8. Research on Some Dielectric Materials""; ""9. Complex Impedance Spectroscopy of Dielectric Materials""; ""10. Multiferroic Property of Dielectric Materials""; ""11. Applications""; ""12. Conclusion""; ""References""; ""UNDERSTANDING THE IMPACT OF HIGH-K GATE ANDSPACER DIELECTRICS ON THE DEVICE AND CIRCUITPERFORMANCE OF NANOSCALE MOSFETS""; ""Introduction""; ""1. Impact of High-K Gate Dielectric on Device Performance""
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505 |
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|a ""2. Impact of High-K Gate Dielectric on Circuit Performance""""3. Effect of High-K Spacers on Nanoscale CMOS Devices""; ""Summary""; ""References""; ""ORIENTATION SELECTIVITY CONTROL BY SURFACE POTENTIAL MODIFICATION IN OXIDE THIN FILM EPITAXIAL GROWTH""; ""Abstract""; ""1.Introduction""; ""2.Principle of OSE""; ""3.Experimental""; ""4.OSE by Substrate Bias Application""; ""5.Electron Beam Induced OSE""; ""6.Characterization of OSE Layers""; ""7.Conclusion""; ""Acknowledgements""; ""References""; ""UNUSUAL DIELECTRIC PROPERTIES OF CACUTIO""; ""Abstract""; ""1.Introduction""
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505 |
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|a ""2.Physical Properties""""3.Impurity Effects""; ""4.CCTO-Based Composites""; ""5.Related Oxides""; ""6.Concluding Remarks""; ""References""; ""DIELECTRIC RESPONSE METHODS FOR DIAGNOSTICS OF POWER TRANSFORMERS ""; ""Abstract ""; ""1. Introduction""; ""2. Insulating Materials Defined ""; ""3. Power Transformer Insulation""; ""4. Insulation Ageing ""; ""5. Condition Assessment of Power Transformer Insulation ""; ""6. Polarization Phenomena ""; ""7. Dielectric Spectroscopy Techniques ""; ""Conclusions ""; ""References ""
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|a ""SYMMETRY-INDUCED RESONANT TRANSMISSIONOF ELECTROMAGNETIC WAVES IN NON-PERIODICDIELECTRIC MICROSTRUCTURES""""Abstract""; ""1. Introduction""; ""II. Theoretical Analysis of Optical Propagation in AperiodicDielectric Multilayers with Internal Symmetry""; ""III. Optical Observation of Symmetric Fibonacci DielectricMultilayers""; ""IV. Resonant Transmission and Frequency Trifurcation of LightWaves in Thue-Morse Dielectric Multilayers""; ""V. Manipulation of Resonant Transmission of ElectromagneticWave by Tuning Nonperiodic Structure""
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546 |
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|a English.
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590 |
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|a ProQuest Ebook Central
|b Ebook Central Academic Complete
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650 |
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0 |
|a Dielectrics.
|
650 |
|
0 |
|a Interconnects (Integrated circuit technology)
|
650 |
|
6 |
|a Diélectriques.
|
650 |
|
6 |
|a Interconnexions (Technologie des circuits intégrés)
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650 |
|
7 |
|a SCIENCE
|x Physics
|x Electromagnetism.
|2 bisacsh
|
650 |
|
7 |
|a SCIENCE
|x Physics
|x Electricity.
|2 bisacsh
|
650 |
|
7 |
|a Dielectrics
|2 fast
|
650 |
|
7 |
|a Interconnects (Integrated circuit technology)
|2 fast
|
700 |
1 |
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|a Huang, Ai,
|d 1965-
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758 |
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|i has work:
|a Recent advances in dielectric materials (Text)
|1 https://id.oclc.org/worldcat/entity/E39PCH8dvbTYJpyG4fGc8BvW6q
|4 https://id.oclc.org/worldcat/ontology/hasWork
|
776 |
0 |
8 |
|i Print version:
|t Recent advances in dielectric materials
|d New York : Nova Science Publishers, c2009.
|z 1606922661
|w (DLC) 2008047491
|
856 |
4 |
0 |
|u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=3018222
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