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On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the Mm-Wave Range
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Aalborg :
River Publishers,
2019.
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| Colección: | River Publishers Series in Electronic Materials and Devices Ser.
|
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Front Cover; Half Title; RIVER PUBLISHERS SERIES IN ELECTRONIC MATERIALS AND DEVICES; Title
- On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond; Copyright; Contents; Preface and Acknowledgments; List of Figures; List of Tables; List of Abbreviations; PART I
- Development and Implementation; Chapter 1
- Motivation; 1.1 Advances in Silicon Technologies for mm-Wave Applications; 1.2 Challenges of RF Characterization of Advanced Devices; 1.3 Contribution of This Work; Chapter 2
- Introduction
- 2.1 S-parameters of a Linear Network2.2 Theory of a Uniform Waveguide Mode; 2.2.1 Waveguide Voltage and Current; 2.2.2 Power; 2.2.3 Characteristic Impedance; 2.2.4 Equivalent Circuit Representation of Transmission Line; 2.2.5 Effective Permittivity and Measurement of Characteristic Impedance; 2.3 Waveguide Circuit Theory; 2.3.1 Traveling Wave; 2.3.2 Pseudo-Waves; 2.3.3 Scattering and Pseudo-Scattering Matrices; 2.3.4 The Cascade Matrix; 2.3.5 Change of Reference Impedance; 2.3.6 Two-Port Reference Impedance Transformation; 2.3.7 Load Impedance; 2.4 S-parameter Measurement
- 2.5 Systematic Measurement Errors and S-parameter Calibration2.6 S-parameter Measurements at the Wafer Level; 2.6.1 Design of Modern Wafer Probes; 2.6.2 DUT Contact Pads and BEOL Parasitics; 2.6.3 Calibration Standards; Chapter 3
- Development of Calibration Solutions; 3.1 Requirements; 3.2 Calibration of a Two-Port VNA; 3.3 Transfer TMR Solution; 3.3.1 Notes on Calibration Reference Impedance; 3.3.2 Calibration with a Thru of a Finite Length; 3.3.3 Notes on the Probe-Tip Reflection Standards; 3.4 Verification of the Transfer TMR; 3.5 Multiport Calibration; 3.6 Conclusion
- Chapter 4
- Design of On-Wafer Calibration Standards4.1 Design Tradeoff; 4.2 Design of RF Contact Pad and Device Interface; 4.3 Location of the Reference Plane; 4.4 Calibration Standards; 4.4.1 Thru and Line; 4.4.2 Short; 4.4.3 Load; 4.5 De-Embedding Elements; 4.5.1 Pad Open and Pad Short; 4.5.2 Probe Short; 4.5.3 Complete Open and Complete Short; 4.6 Calibration Standards and De-Embedding Elements Implemented in the IHP BiCMOS SiGe:C Process; 4.7 Calibration Standards Implemented in IBM RF CMOS 8SF Process; Chapter 5
- Electrical Properties of Custom Standards
- 5.1 Multiline TRL and Transfer TMR Requirements5.2 Measurement of the Characteristic Impedance of the Line; 5.3 Establishing the Reference for the Calibration Comparison Method; 5.3.1 NIST GaAs Reference Material RM8130; 5.3.2 Commercial Alumina Substrate as the Reference; 5.4 Results of Measurement of the Characteristic Impedance of the Line; 5.4.1 IBM Advanced RF CMOS 8SF Process; 5.4.2 STMicroelectronics' BiCMOS9MMW Process; 5.5 Definition of the Load Impedance; 5.5.1 Measurement Method; 5.5.2 EM Simulation of the Load Reactance