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|b .R865 2019
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|a 621.38152
|2 23
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|a UAMI
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|a Rumiantsev, Andrej.
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|a On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the Mm-Wave Range
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|a Aalborg :
|b River Publishers,
|c 2019.
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|a 1 online resource (278 pages)
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|a text
|b txt
|2 rdacontent
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|a computer
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|2 rdamedia
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|a online resource
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|a River Publishers Series in Electronic Materials and Devices Ser.
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|a Print version record.
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|a Front Cover; Half Title; RIVER PUBLISHERS SERIES IN ELECTRONIC MATERIALS AND DEVICES; Title -- On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond; Copyright; Contents; Preface and Acknowledgments; List of Figures; List of Tables; List of Abbreviations; PART I -- Development and Implementation; Chapter 1 -- Motivation; 1.1 Advances in Silicon Technologies for mm-Wave Applications; 1.2 Challenges of RF Characterization of Advanced Devices; 1.3 Contribution of This Work; Chapter 2 -- Introduction
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|a 2.1 S-parameters of a Linear Network2.2 Theory of a Uniform Waveguide Mode; 2.2.1 Waveguide Voltage and Current; 2.2.2 Power; 2.2.3 Characteristic Impedance; 2.2.4 Equivalent Circuit Representation of Transmission Line; 2.2.5 Effective Permittivity and Measurement of Characteristic Impedance; 2.3 Waveguide Circuit Theory; 2.3.1 Traveling Wave; 2.3.2 Pseudo-Waves; 2.3.3 Scattering and Pseudo-Scattering Matrices; 2.3.4 The Cascade Matrix; 2.3.5 Change of Reference Impedance; 2.3.6 Two-Port Reference Impedance Transformation; 2.3.7 Load Impedance; 2.4 S-parameter Measurement
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|a 2.5 Systematic Measurement Errors and S-parameter Calibration2.6 S-parameter Measurements at the Wafer Level; 2.6.1 Design of Modern Wafer Probes; 2.6.2 DUT Contact Pads and BEOL Parasitics; 2.6.3 Calibration Standards; Chapter 3 -- Development of Calibration Solutions; 3.1 Requirements; 3.2 Calibration of a Two-Port VNA; 3.3 Transfer TMR Solution; 3.3.1 Notes on Calibration Reference Impedance; 3.3.2 Calibration with a Thru of a Finite Length; 3.3.3 Notes on the Probe-Tip Reflection Standards; 3.4 Verification of the Transfer TMR; 3.5 Multiport Calibration; 3.6 Conclusion
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|a Chapter 4 -- Design of On-Wafer Calibration Standards4.1 Design Tradeoff; 4.2 Design of RF Contact Pad and Device Interface; 4.3 Location of the Reference Plane; 4.4 Calibration Standards; 4.4.1 Thru and Line; 4.4.2 Short; 4.4.3 Load; 4.5 De-Embedding Elements; 4.5.1 Pad Open and Pad Short; 4.5.2 Probe Short; 4.5.3 Complete Open and Complete Short; 4.6 Calibration Standards and De-Embedding Elements Implemented in the IHP BiCMOS SiGe:C Process; 4.7 Calibration Standards Implemented in IBM RF CMOS 8SF Process; Chapter 5 -- Electrical Properties of Custom Standards
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|a 5.1 Multiline TRL and Transfer TMR Requirements5.2 Measurement of the Characteristic Impedance of the Line; 5.3 Establishing the Reference for the Calibration Comparison Method; 5.3.1 NIST GaAs Reference Material RM8130; 5.3.2 Commercial Alumina Substrate as the Reference; 5.4 Results of Measurement of the Characteristic Impedance of the Line; 5.4.1 IBM Advanced RF CMOS 8SF Process; 5.4.2 STMicroelectronics' BiCMOS9MMW Process; 5.5 Definition of the Load Impedance; 5.5.1 Measurement Method; 5.5.2 EM Simulation of the Load Reactance
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|a 5.5.3 Two-Step De-Embedding for Measurement of Load Reactance
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| 590 |
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|a ProQuest Ebook Central
|b Ebook Central Academic Complete
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| 650 |
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0 |
|a Semiconductors
|x Characterization.
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| 650 |
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6 |
|a Semi-conducteurs
|x Caractérisation.
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| 650 |
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|a Semiconductors
|x Characterization
|2 fast
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| 776 |
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|i Print version:
|a Rumiantsev, Andrej.
|t On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the Mm-Wave Range.
|d Aalborg : River Publishers, ©2019
|z 9788770221122
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| 830 |
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|a River Publishers Series in Electronic Materials and Devices Ser.
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| 856 |
4 |
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|u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=5829253
|z Texto completo
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| 936 |
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|a BATCHLOAD
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|b IZTAP
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