Defects and Impurities in Silicon Materials : an Introduction to Atomic-Level Silicon Engineering.

Mostrar otras versiones (1)
Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Yoshida, Yutaka
Otros Autores: Langouche, Guido
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Tokyo : Springer Japan, 2016.
Colección:Lecture Notes in Physics Ser.
Temas:
Silicon.
Silicon
Silicium.
silicon.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Intro
  • Preface
  • Personal Reminiscences About George Rozgonyi
  • Contents
  • 1 Diffusion and Point Defects in Silicon Materials
  • 1.1 Introduction
  • 1.2 Defects in Semiconductors
  • 1.3 Phenomenological Treatment of Diffusion
  • 1.4 Atomistic Description of Diffusion
  • 1.5 Diffusion Mechanisms
  • 1.5.1 Direct Diffusion Mechanisms
  • 1.5.2 Indirect Diffusion Mechanisms
  • 1.5.2.1 Self-Diffusion
  • 1.5.2.2 Foreign-Atom Diffusion
  • 1.6 Mathematical Description of Diffusion
  • 1.6.1 Diffusion of Hybrid Atoms
  • 1.6.1.1 Reduced Differential Equation System
  • 1.6.1.2 Dominance of the Dissociative Mechanism
  • 1.6.1.3 Dominance of the Kick-Out Mechanism
  • 1.6.1.4 Occurrence of Both Ai-As Exchange Mechanisms
  • 1.6.1.5 Numerical Simulation of Foreign-Atom Diffusion via Interstitial-Substitutional Exchange
  • 1.6.2 Diffusion of Dopant Atoms
  • 1.6.2.1 Reaction Mechanisms with Charge States
  • 1.6.2.2 Mathematical Formulation of Dopant Diffusion
  • 1.6.2.3 Dopant Diffusion via the Dissociative Mechanism
  • 1.7 Experimental Diffusion Profiles
  • 1.7.1 Diffusion Profiles of Hybrid Atoms
  • 1.7.2 Diffusion Profiles of Dopant Atoms
  • 1.8 Concluding Remarks
  • 2.3.1 Structure of Solids and Defects
  • 2.3.2 Electronic Structure of Defects
  • 2.3.3 Adiabatic Mechanisms: Reactions, Migration, ...
  • 2.3.4 Formation Energies and Electronic Levels
  • 2.3.5 Local Vibrational Modes of Defects
  • 2.3.6 Defect Response to Uniaxial Stress
  • 2.4 Defects in Silicon Nanostructures
  • 2.4.1 Freestanding and Particulate Nanostructures
  • 2.4.2 Embedded Nanostructures
  • 2.4.3 Doping of Si Nanostructures
  • 2.5 Summary
  • References
  • 3 Electrical and Optical Defect Evaluation Techniques for Electronic and Solar Grade Silicon
  • 3.1 Introduction
  • 3.2 Recombination-Generation Processes in Silicon
  • 3.2.1 Carrier Lifetime
  • 3.2.2 Shockley-Read-Hall (SRH) Statistics
  • 3.3 Quantifying the Properties of Defects
  • 3.3.1 Measurement of the Concentrations of Shallow Donors and Acceptors
  • 3.3.1.1 Resistivity Based Methods
  • 3.3.1.2 Hall Effect Measurements
  • 3.3.1.3 Capacitance-Voltage Techniques
  • 3.3.2 Basic Principles of Measurements of Deep Level Defect Parameters
  • 3.3.3 Thermal Emission of Carriers
  • 3.3.4 Capture Cross Sections
  • 3.3.5 Comparing Capacitance and Current Measurements

Ejemplares similares