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|a 9784431558002
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|a 546.683
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|a UAMI
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|a Yoshida, Yutaka.
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|a Defects and Impurities in Silicon Materials :
|b an Introduction to Atomic-Level Silicon Engineering.
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|a Tokyo :
|b Springer Japan,
|c 2016.
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| 300 |
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|a 1 online resource (498 pages)
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| 336 |
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|a text
|b txt
|2 rdacontent
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|a computer
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|2 rdamedia
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|a online resource
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|a Lecture Notes in Physics Ser. ;
|v v. 916
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|a Print version record.
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|a Intro -- Preface -- Personal Reminiscences About George Rozgonyi -- Contents -- 1 Diffusion and Point Defects in Silicon Materials -- 1.1 Introduction -- 1.2 Defects in Semiconductors -- 1.3 Phenomenological Treatment of Diffusion -- 1.4 Atomistic Description of Diffusion -- 1.5 Diffusion Mechanisms -- 1.5.1 Direct Diffusion Mechanisms -- 1.5.2 Indirect Diffusion Mechanisms -- 1.5.2.1 Self-Diffusion -- 1.5.2.2 Foreign-Atom Diffusion -- 1.6 Mathematical Description of Diffusion -- 1.6.1 Diffusion of Hybrid Atoms -- 1.6.1.1 Reduced Differential Equation System
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|a 1.6.1.2 Dominance of the Dissociative Mechanism -- 1.6.1.3 Dominance of the Kick-Out Mechanism -- 1.6.1.4 Occurrence of Both Ai-As Exchange Mechanisms -- 1.6.1.5 Numerical Simulation of Foreign-Atom Diffusion via Interstitial-Substitutional Exchange -- 1.6.2 Diffusion of Dopant Atoms -- 1.6.2.1 Reaction Mechanisms with Charge States -- 1.6.2.2 Mathematical Formulation of Dopant Diffusion -- 1.6.2.3 Dopant Diffusion via the Dissociative Mechanism -- 1.7 Experimental Diffusion Profiles -- 1.7.1 Diffusion Profiles of Hybrid Atoms -- 1.7.2 Diffusion Profiles of Dopant Atoms -- 1.8 Concluding Remarks
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| 505 |
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|a 2.3.1 Structure of Solids and Defects -- 2.3.2 Electronic Structure of Defects -- 2.3.3 Adiabatic Mechanisms: Reactions, Migration, ... -- 2.3.4 Formation Energies and Electronic Levels -- 2.3.5 Local Vibrational Modes of Defects -- 2.3.6 Defect Response to Uniaxial Stress -- 2.4 Defects in Silicon Nanostructures -- 2.4.1 Freestanding and Particulate Nanostructures -- 2.4.2 Embedded Nanostructures -- 2.4.3 Doping of Si Nanostructures -- 2.5 Summary -- References -- 3 Electrical and Optical Defect Evaluation Techniques for Electronic and Solar Grade Silicon -- 3.1 Introduction
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|a 3.2 Recombination-Generation Processes in Silicon -- 3.2.1 Carrier Lifetime -- 3.2.2 Shockley-Read-Hall (SRH) Statistics -- 3.3 Quantifying the Properties of Defects -- 3.3.1 Measurement of the Concentrations of Shallow Donors and Acceptors -- 3.3.1.1 Resistivity Based Methods -- 3.3.1.2 Hall Effect Measurements -- 3.3.1.3 Capacitance-Voltage Techniques -- 3.3.2 Basic Principles of Measurements of Deep Level Defect Parameters -- 3.3.3 Thermal Emission of Carriers -- 3.3.4 Capture Cross Sections -- 3.3.5 Comparing Capacitance and Current Measurements
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| 590 |
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|a ProQuest Ebook Central
|b Ebook Central Academic Complete
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| 650 |
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|a Silicon.
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| 650 |
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|a Silicon
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|a Silicium.
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|a silicon.
|2 aat
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|a Silicon
|2 fast
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| 700 |
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|a Langouche, Guido.
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| 758 |
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|i has work:
|a Defects and impurities in silicon materials (Text)
|1 https://id.oclc.org/worldcat/entity/E39PCGxdcVFw4F9XKhfW8r9XYd
|4 https://id.oclc.org/worldcat/ontology/hasWork
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|i Print version:
|a Yoshida, Yutaka.
|t Defects and Impurities in Silicon Materials : An Introduction to Atomic-Level Silicon Engineering.
|d Tokyo : Springer Japan, ©2016
|z 9784431557999
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| 830 |
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0 |
|a Lecture Notes in Physics Ser.
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| 856 |
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|u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=6302873
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