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Ultra-low input power conversion circuits based on tunnel FETs /
The increasing demand in electronic portability imposes low power consumption as a key metric to analog and digital circuit design. Tunnel FET (TFET) devices have been explored mostly in digital circuits, showing promising results for ultra-low power and energy efficient circuit applications. The TF...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Gistrup, Denmark :
River Publishers,
[2018]
|
| Colección: | River Publishers series in circuits and systems.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 049 | |a UAMI | ||
| 100 | 1 | |a Cavalheiro, David. | |
| 245 | 1 | 0 | |a Ultra-low input power conversion circuits based on tunnel FETs / |c David Cavalheiro, Francesc Moll, Stanimir Valtchev. |
| 264 | 1 | |a Gistrup, Denmark : |b River Publishers, |c [2018] | |
| 300 | |a 1 online resource | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a River Publishers series in circuits and systems | |
| 505 | 0 | |a Front Cover; Half Title Page; RIVER PUBLISHERS SERIES IN CIRCUITS AND SYSTEMS; Title Page; Copyright Page; Dedication Page; Contents; Preface; Acknowledgments; List of Figures; List of Tables; Chapter 1 -- Introduction; 1.1 The Technology Scaling Roadmap so far; 1.2 New Solutions for Future Technology Nodes; 1.3 Energy Harvesting in a More than Moore era; 1.4 Tunnel FETs as a Key Technology for Energy Harvesting; 1.5 Topics Addressed in This Book; 1.6 Book Structure; References; Chapter 2 -- Tunnel FET: State of the Art; 2.1 The Tunneling Phenomenon; 2.2 Band-to-Band Tunneling (BTBT) Current. | |
| 505 | 8 | |a 2.3 From Tunnel Diode to Gated p-i-n Structure2.3.1 First Observations of Tunneling in Gated Structures; 2.3.2 Structural Improvements for Boosted Performance; 2.3.3 Tunnel FET Evolution over the Past Decades; 2.3.4 Directions for Further Improvements in Tunneling Devices; 2.3.5 A Brief Discussion of the Tunneling Device State of the Art; References; Chapter 3 -- Tunnel FET: Physical Properties; 3.1 Thermionic Injection vs. BTBT; 3.2 Impact of Physical Properties in the TFET Performance; 3.2.1 Device Structure and Applied Model; 3.2.2 Dielectric Permittivity, EOT, and Body Thickness Impact. | |
| 505 | 8 | |a 3.2.3 Impact of Doping in Drain and Source Regions of Si-TFET3.2.4 Impact of Materials in a Double-gate TFET; 3.2.5 Impact of Doping in Drain and Source Regions for TFETs with Different Materials; 3.3 Chapter Summary; References; Chapter 4 -- Tunnel FET: Electrical Properties; 4.1 Tunnel FET Models for SPICE Simulations; 4.1.1 Analytic TFET Model; 4.1.2 TFET Model Based on Lookup Tables; 4.2 Electrical Characteristics of TFETs; 4.2.1 Input Characteristics of TFETs; 4.2.2 Output Characteristics of TFETs; 4.2.3 Intrinsic Capacitance of TFETs; 4.3 TFETs in Digital Design. | |
| 505 | 8 | |a 4.4 TFETs in Analog Design4.5 TFETs' Circuit Layout Issues and Extra-parasitics; 4.6 Chapter Summary; References; Chapter 5 -- Tunnel FET-based Charge Pumps; 5.1 Motivation; 5.2 Problems Associated with TFETs in Charge Pumps; 5.3 Circuit-level Solutions for Reverse-biased TFETs; 5.4 Proposed TFET-based Charge Pump; 5.5 Capacitance Optimization of Charge-pump Stage; 5.6 Charge Pumps' Performance Comparison; 5.7 Chapter Summary; References; Chapter 6 -- Tunnel FET-based Rectifiers; 6.1 Motivation; 6.2 State-of-the-art TFET-based Rectifier; 6.3 Advantages of Tunnel FETs in Rectifiers. | |
| 505 | 8 | |a 6.4 Drawbacks of Tunnel FETs in Rectifiers6.5 Proposed Tunnel FET-based Rectifier; 6.6 Optimization of the Proposed Rectifier; 6.7 Performance Comparison of Rectifiers; 6.8 Chapter Summary; References; Chapter 7 -- TFET-based Power-management Circuit for RF Energy Harvesting; 7.1 Motivation; 7.2 Challenges in RF Power Transport; 7.3 Proposed TFET-based PMC; 7.3.1 Startup Circuit; 7.3.2 Boost Circuit; 7.3.2.1 Challenges in TFET-based boost-converter design; 7.3.2.2 Advantages of TFETs in PMC and boost converters; 7.3.3 Controller Circuit; 7.4 Simulation Results; 7.5 Chapter Summary; References. | |
| 505 | 8 | |a Chapter 8 -- TFET-based Power-management Circuit for Nanowatt DC Energy-Harvesting Sources. | |
| 588 | 0 | |a Print version record. | |
| 520 | |a The increasing demand in electronic portability imposes low power consumption as a key metric to analog and digital circuit design. Tunnel FET (TFET) devices have been explored mostly in digital circuits, showing promising results for ultra-low power and energy efficient circuit applications. The TFET presents a low inverse sub-threshold slope (SS) that allows a low leakage energy consumption, desirable in many digital circuits, especially memories. In this book, the TFET is explored as an alternative technology also for ultra-low power and voltage conversion and management circuits, suitable for weak energy harvesting (EH) sources. The TFET distinct electrical characteristics under reverse bias conditions require changes in conventional circuit topologies. In this book, ultra-low input power conversion circuits based on TFETs are designed and analyzed, evaluating their performance as rectifiers, charge pumps and power management circuits (PMC) for RF and DC EH sources. | ||
| 545 | 0 | |a David Cavalheiro, Francesc Moll, Stanimir Valtchev | |
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Digital electronics |x Design and construction. | |
| 650 | 0 | |a Low voltage integrated circuits. | |
| 650 | 6 | |a Circuits intégrés à faible consommation. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a SCIENCE / Energy |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY / Electronics / Microelectronics |2 bisacsh | |
| 650 | 7 | |a Digital electronics |x Design and construction |2 fast | |
| 650 | 7 | |a Low voltage integrated circuits |2 fast | |
| 700 | 1 | |a Moll, Francesc. | |
| 700 | 1 | |a Valtchev, Stanimir. | |
| 758 | |i has work: |a Ultra-low input power conversion circuits based on tunnel FETs (Text) |1 https://id.oclc.org/worldcat/entity/E39PCG8TRFPHpq837G8Qy4XHfm |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a Cavalheiro, David. |t Ultra-low input power conversion circuits based on tunnel EETs. |d Gistrup, Denmark : River Publishers, [2018] |z 9788793609754 |
| 830 | 0 | |a River Publishers series in circuits and systems. | |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=5493976 |z Texto completo |
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| 994 | |a 92 |b IZTAP | ||