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180414s2017 xx o 000 0 eng d |
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|a 9789674611231
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|a TK7871.15.S56
|b .C443 2017
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|a 621.38152
|2 23
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|a UAMI
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|a Cheah, Sook Fong.
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|a Fabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method.
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| 260 |
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|a Gelugor :
|b Penerbit USM,
|c 2017.
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| 300 |
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|a 1 online resource (65 pages)
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| 336 |
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
|b cr
|2 rdacarrier
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|a Print version record.
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|a Cover; Half Title Page; Title Page; Copyright Page; Contents; List of Tables; List of Figures; List of Symbols; Preface; List of Abbreviations; 1 Introduction; 2 Overview of the Fabrication of Porous GaN via Wet Etching Method; 2.1 Chemical etching; 2.2 Anodic etching; 2.3 Metal-assisted electroless etching; 2.4 UV-assisted photoelectrochemical etching; 3 Attenuated Total Reflection Study of Porous Semiconductor; 4 Methodology; 4.1 Sample preparation; 4.2 Experimental set-up for electrochemical etching approach; 4.3 Characterizations; 4.3.1 FESEM measurement.
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|a 4.3.2 Polarized IR-ATR Measurement4.3.3 PL measurement; 4.3.4 ATR curve fitting; 5 The Influences of Applied Voltages on the Surface Morphology and Optical Properties of Porous UID GaN Thin Films; 5.1 FESEM analysis; 5.2 p-polarized ATR study; 5.3 PL analysis; 6 The Influences of Applied Voltages on the Surface Morphology and Optical Properties of Porous Si-Doped GaN Thin Films; 6.1 FESEM analysis; 6.2 p-polarized ATR study; 6.3 PL analysis; 7 The Influences of Etching Durations on the Surface Morphology and Optical Properties of Porous Si-Doped GaN Thin Films; 7.1 FESEM analysis.
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| 505 |
8 |
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|a 7.2 p-polarized ATR study8 Conclusion; Appendix; References; Index; Back Cover.
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| 590 |
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|a ProQuest Ebook Central
|b Ebook Central Academic Complete
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| 590 |
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|a Knovel
|b ACADEMIC - Adhesives Coatings Sealants And Inks
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|a Silicon carbide.
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|a Silicon carbide
|2 fast
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|a Ng, Sha Shiong.
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| 758 |
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|i has work:
|a Fabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method (Work)
|1 https://id.oclc.org/worldcat/entity/E39PCXHPKXfgPrfBHPWVbdk8VK
|4 https://id.oclc.org/worldcat/ontology/hasWork
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| 776 |
0 |
8 |
|i Print version:
|a Cheah, Sook Fong.
|t Fabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method.
|d Gelugor : Penerbit USM, ©2017
|z 9789674611385
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| 856 |
4 |
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|u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=5338881
|z Texto completo
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|a EBL - Ebook Library
|b EBLB
|n EBL5338881
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|a 92
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