Ultrathin Calcium Titanate Capacitors : Physics and Application.

Annotation

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Krause, Andreas
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Berlin : Logos Verlag Berlin, 2014.
Colección:Research at NaMLab Ser.
Temas:
Semiconductor storage devices.
Dynamic random access memory.
Ordinateurs > Mémoires à semi-conducteurs.
Ordinateurs > Mémoires vives dynamiques.
Dynamic random access memory
Semiconductor storage devices
Acceso en línea:Texto completo

MARC

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100 1 |a Krause, Andreas. 
245 1 0 |a Ultrathin Calcium Titanate Capacitors :  |b Physics and Application. 
260 |a Berlin :  |b Logos Verlag Berlin,  |c 2014. 
300 |a 1 online resource (164 pages). 
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505 0 |a Intro; 1 Introduction; 1.1 Motivation; 1.2 Structure of this work; 2 Fundamentals of materials and electrical properties; 2.1 Calcium titanate; 2.1.1 Structure; 2.1.2 Optical properties and band gap; 2.1.3 Permittivity of CaTiO3; 2.1.4 Current applications for CaTiO3; 2.2 Metals and conducting metal composites for applicable high temperature processes; 2.3 Non-linearity of dielectric permittivity; 2.4 Leakage current mechanisms; 2.4.1 Schottky emission; 2.4.2 Tunneling; 2.4.3 Poole-Frenkel effect; 2.4.4 Trap-assisted tunneling; 2.5 Dielectric relaxation. 
505 8 |a 2.6 Amorphous versus crystalline dielectric layers3 Sample Preparation and Methods; 3.1 Sample Preparation of metal-insulator-metal capacitors; 3.1.1 Sputtering of electrodes and high-k dielectrics; 3.1.2 Standard parameters for metal deposition; 3.1.3 Parameters for dielectric deposition; 3.1.4 Structuring of top electrodes; 3.2 Physical characterization; 3.3 Electrical characterization; 3.3.1 Current voltage measurements; 3.3.2 Leakage current measurements at different temperatures; 3.3.3 Capacitance voltage measurements; 3.3.4 Relaxation measurements. 
505 8 |a 4 Temperature stable high work function electrodes4.1 Sputter deposition of electrodes; 4.1.1 Titanium nitride layers; 4.1.2 Ruthenium and Ruthenium dioxide layers; 4.1.3 Platinum electrodes; 4.1.4 Platinum on Titanium nitride; 4.2 CVD deposition of carbon electrodes; 4.3 Conclusion; 5 Physical investigation of calcium titanate layers; 5.1 Experiments on optical properties and density of CaTiO3 layers; 5.1.1 Refractive index and extinction coefficient of CaTiO3; 5.1.2 Band gap determination with low energy electron energy loss spectroscopy; 5.1.3 Density approximation with X-Ray reflectance. 
505 8 |a 5.2 X-ray photoelectron spectroscopy of CaTiO3 layers5.3 Stoichiometry of CaTiO3 layers; 5.4 Roughness and crystallinity of CaTiO3 layers; 5.4.1 Surface roughness; 5.4.2 Crystallization of CaTiO3; 5.5 Conclusion and summary; 6 TEM characterization on crystallinity of CaTiO3; 6.1 Crystallization behavior at 550â#x97;ŒC; 6.2 Strain in dielectric layer induced by top electrode; 6.3 Comparison of post deposition anneals and CaTiO3 crystallization during growth; 6.4 Nanocrystals of CaTiO3 in an amorphous matrix; 6.5 Discussion of preferential growth; 6.6 Conclusion. 
505 8 |a 7 Electrical characterization of CaTiO3 in MIM capacitor stacks7.1 The relation between physical and electrical properties of CaTiO3 MIM capacitors; 7.2 Capacitance measurements of CaTiO3 capacitors; 7.2.1 Capacitance dependence on thickness; 7.2.2 Non-linear voltage dependence of capacitance; 7.2.3 Temperature dependence of capacitance; 7.2.4 Frequency dependence of CaTiO3 capacitance; 7.3 Leakage currents in CaTiO3 capacitors; 7.3.1 The influence of different electrodes; 7.3.2 Thickness dependence of leakage currents; 7.3.3 Temperature dependence of leakage currents; 7.4 Relaxation. 
500 |a 7.5 Optimized capacitance and leakage using semicrystalline samples. 
520 8 |a Annotation  |b To enable further scaling for future generations of DRAM capacitors, significant efforts to replace Zirconium dioxide as high-k dielectric have been undertaken since the 1990s. In calculations, Calcium titanate has been identified as a potential replacement to allow a significant capacitance improvement. This material exhibits a significantly higher permittivity and a sufficient band gap. The scope of this thesis is therefore the preparation and detailed physical and electrical characterization of ultrathin Calcium titanate layers. The complete capacitor stacks including Calcium titanate have been prepared under ultrahigh vacuum to minimize the influence of adsorbents or contaminants at the interfaces. Various electrodes are evaluated regarding temperature stability and chemical reactance to achieve crystalline Calcium titanate. An optimal electrode was found to be a stack consisting of Pt on TiN. Additionally, this thesis presents fundamental results on the creation, physical and electrical characterization of Calcium titanate nanocrystallites embedded in an amorphous matrix. Capacitors with these nanocrystallites exhibit an increased permittivity of 55 with low leakage currents comparable to currents in amorphous layers. 
590 |a ProQuest Ebook Central  |b Ebook Central Academic Complete 
650 0 |a Semiconductor storage devices. 
650 0 |a Dynamic random access memory. 
650 6 |a Ordinateurs  |x Mémoires à semi-conducteurs. 
650 6 |a Ordinateurs  |x Mémoires vives dynamiques. 
650 7 |a Dynamic random access memory  |2 fast 
650 7 |a Semiconductor storage devices  |2 fast 
758 |i has work:  |a Ultrathin calcium titanate capacitors (Text)  |1 https://id.oclc.org/worldcat/entity/E39PD37hJRQwv6JMWDfd9WxbV3  |4 https://id.oclc.org/worldcat/ontology/hasWork 
776 0 8 |i Print version:  |a Krause, Andreas.  |t Ultrathin Calcium Titanate Capacitors : Physics and Application.  |d Berlin : Logos Verlag Berlin, ©2014  |z 9783832537241 
830 0 |a Research at NaMLab Ser. 
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