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|a UAMI
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|a Nosaeva, Ksenia.
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|a Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz.
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|a Göttingen :
|b Cuvillier Verlag,
|c 2016.
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|a 1 online resource (155 pages)
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|a text
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|a Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ;
|v v. 36
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|a Print version record.
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|a Acknowledgment; Zusammenfassung; Abstract; Contents; 1 Introduction; 2 Diamond substrate properties; 3 Thermal resistance of HBTs; 4 Electrical and thermal via connection through the diamond layer; 5 Full process integration and realization of diamond heat -- sink InP HBT MMICs; 6 Summary; 7 Outlook; Publications; Appendix; Bibliography.
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|a Includes bibliographical references.
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590 |
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|a ProQuest Ebook Central
|b Ebook Central Academic Complete
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650 |
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|a Modulation-doped field-effect transistors.
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6 |
|a Transistors HEMT.
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650 |
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7 |
|a Modulation-doped field-effect transistors
|2 fast
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776 |
0 |
8 |
|i Print version:
|a Nosaeva, Ksenia.
|t Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz.
|d Göttingen : Cuvillier Verlag, ©2016
|z 9783736992870
|
830 |
|
0 |
|a Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik.
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856 |
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