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|a 621.38152
|2 23
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|a UAMI
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|a Shakfa, Mohammad Khaled.
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|a Localization Effects in Disordered III-V Semiconductor Nanostructures.
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| 260 |
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|a Göttingen :
|b Cuvillier Verlag,
|c 2015.
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|a 1 online resource (121 pages)
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|a text
|b txt
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|a Acknowledgements; Contents; 1 Introduction; 2 Background; 3 Experimental Procedure; 4 Photoluminescence of Disordered Semiconductors; 5 Hopping Relaxation of Excitons in Disordered Semiconductors: Energy Scaling of Disorder; 6 Quantitative Description of the Photoluminescence Thermal Quenching in Ga(AsBi); 7 Summary; Bibliography; List of Publications.
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| 504 |
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|a Includes bibliographical references.
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|a eBooks on EBSCOhost
|b EBSCO eBook Subscription Academic Collection - Worldwide
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|a ProQuest Ebook Central
|b Ebook Central Academic Complete
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|a Semiconductors.
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| 650 |
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|a Nanostructures.
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|a Semi-conducteurs.
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|a Nanostructures.
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|a semiconductor.
|2 aat
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| 650 |
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|a Nanostructures
|2 fast
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| 650 |
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|a Semiconductors
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|i has work:
|a Localization effects in disordered III-V semiconductor nanostructures (Text)
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|i Print version:
|a Shakfa, Mohammad Khaled.
|t Localization Effects in Disordered III-V Semiconductor Nanostructures.
|d Göttingen : Cuvillier Verlag, ©2015
|z 9783736991606
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