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170819s2017 nju o 000 0 eng d |
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|a 9783527699797
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|a 3527699791
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|a (OCoLC)1001380043
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|a QH212.A78
|b .C663 2017
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|a 620.11297
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|a UAMI
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|a Lanza, Mario.
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|a Conductive Atomic Force Microscope.
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|a Newark :
|b John Wiley & Sons, Incorporated,
|c 2017.
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| 300 |
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|a 1 online resource (474 pages)
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| 336 |
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
|b cr
|2 rdacarrier
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|a Print version record.
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|a Title Page; Copyright; Table of Contents; Oxide Films and Conduction AFM; References; List of Contributors; Chapter 1: History and Status of the CAFM; 1.1 The Atomic Force Microscope; 1.2 The Conductive Atomic Force Microscope; 1.3 History and Status of the CAFM; 1.4 Editor's Choice: On the Use of CAFM to Study Nanogenerators Based on Nanowires; 1.5 Conclusions; References; Chapter 2: Fabrication and Reliability of Conductive AFM Probes; 2.1 Introduction; 2.2 Manufacturing of Conductive AFM Probes; 2.3 How to Choose Your C-AFM Tip.
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|a 2.4 Tip Wear and Sample Damage: Applicable Forces and Currents in C-AFM2.5 Conclusions; References; Chapter 3: Fundamentals of CAFM Operation Modes; 3.1 Introduction; 3.2 Tip-Sample Interaction: Contact Area, Effective Emission Area, and Conduction Mechanisms; 3.3 Work Function Difference and Offset Voltage; 3.4 Operation Modes; 3.5 Case Studies; 3.6 Conclusion and Future Perspectives; Acknowledgment; References; Chapter 4: Investigation of High-k Dielectric Stacks by C-AFM: Advantages, Limitations, and Possible Applications; 4.1 Introduction.
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|a 4.2 Comparison Between Macroscopic I-V Measurements and C-AFM4.3 Influence of Displacement Currents on the Sensitivity of C-AFM Measurements; 4.4 Applications of C-AFM; 4.5 Conclusion; References; Chapter 5: Characterization of Grain Boundaries in Polycrystalline HfO2 Dielectrics; 5.1 Introduction; 5.2 Experimental Details and Sample Specifications; 5.3 Formation of Grain Boundaries and Its Local Electrical Properties in HfO2 Dielectric; 5.4 RVS and CVS Stressing of HfO2/SiOx Dielectric Stack; 5.5 Uniform Stressing with Successive Scanning in CAFM Mode; 5.6 Conclusions; References.
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|a Chapter 6: CAFM Studies on Individual GeSi Quantum Dots and Quantum Rings6.1 Introduction; 6.2 Conductive Properties of Individual GeSi QDs and QRs; 6.3 Modulating the Conductive Properties of GeSi QDs; 6.4 Simultaneous Measurements of Composition and Current Distributions of GeSi QRs; 6.5 Conclusions; References; Chapter 7: Conductive Atomic Force Microscopy of Two-Dimensional Electron Systems: From AlGaN/GaN Heterostructures to Graphene and MoS2; 7.1 Introduction; 7.2 Nanoscale Electrical Characterization of AlGaN/GaN Heterostructures; 7.3 CAFM Characterization of Graphene and MoS2.
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|a 7.4 ConclusionsAcknowledgments; References; Chapter 8: Nanoscale Three-Dimensional Characterization with Scalpel SPM; 8.1 Introduction; 8.2 SPM Metrology with Depth Information; 8.3 Scalpel SPM: A Tip-Based Slice-and-View Methodology; 8.4 Applications; 8.5 Conclusions and Outlook; References; Chapter 9: Conductive Atomic Force Microscopy for Nanolithography Based on Local Anodic Oxidation; 9.1 Introduction to AFM Nanolithography; 9.2 Local Anodic Oxidation; 9.3 Kinetics of LAO; 9.4 Measurement of Electrical Current During LAO; 9.5 Conclusions; Acknowledgments; References.
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| 500 |
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|a Chapter 10: Combination of Semiconductor Parameter Analyzer and Conductive Atomic Force Microscope for Advanced Nanoelectronic Characterization.
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| 590 |
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|a ProQuest Ebook Central
|b Ebook Central Academic Complete
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| 650 |
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0 |
|a Atomic force microscopy.
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| 650 |
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6 |
|a Microscopie à force atomique.
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| 650 |
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7 |
|a Atomic force microscopy
|2 fast
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| 776 |
0 |
8 |
|i Print version:
|a Lanza, Mario.
|t Conductive Atomic Force Microscope.
|d Newark : John Wiley & Sons, Incorporated, ©2017
|z 9783527340910
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|b EBLB
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