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Spin Transfer Torque (STT) Based Devices, Circuits, and Memory.
This first-of-its-kind resource is completely dedicated to spin transfer torque (STT) based devices, circuits, and memory. A wide range of topics including, STT MRAMs, MTJ based logic circuits, simulation and modeling strategies, fabrication of MTJ CMOS circuits, non-volatile computing with STT MRAM...
| Clasificación: | Libro Electrónico |
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| Autor principal: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Norwood :
Artech House,
2016.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Spin Transfer Torque Based Devices, Circuits, and Memory; Contents; Preface; 1Introduction to Magnetic Memories and STT; 1.1Electron Spin and FM Materials: Some Basic Concepts; 1.1.1Magnetic Moment of a Single Electron; 1.1.2Magnetization, Spin Polarization, and Spin Filtering; 1.1.3Electrical Spin Injection; 1.2Spin Valve and GMR Effect; 1.3Vector Spin Polarization; 1.4 Theory of Magnetization Dynamics; 1.4.1Gyromagnetic Precession; 1.4.2Damping; 1.4.3Landau-Lifschitz-Gibert Equation; 1.5STT and LLGS Equation; 1.5.1Direction of STT; 1.5.2Magnitude of STT.
- 1.5.3STT in Magnetic Multilayers and Spin Torque Efficiency1.5.4Overview of Internal fields; Summary; References; 2MTJs; 2.1Thin Film Magnetism: In-Plane and Perpendicular Magnetic Anisotropy; 2.2MTJ Architecture and Operation; 2.2.1Precessional Switching (PS); 2.2.2Thermally Assisted Switching (TAS){AU: previously the acronym TSA was "temperature-assisted switch.