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Spin Transfer Torque (STT) Based Devices, Circuits, and Memory.
This first-of-its-kind resource is completely dedicated to spin transfer torque (STT) based devices, circuits, and memory. A wide range of topics including, STT MRAMs, MTJ based logic circuits, simulation and modeling strategies, fabrication of MTJ CMOS circuits, non-volatile computing with STT MRAM...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Norwood :
Artech House,
2016.
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| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 100 | 1 | |a Kaushik, Brajesh Kumar. | |
| 245 | 1 | 0 | |a Spin Transfer Torque (STT) Based Devices, Circuits, and Memory. |
| 260 | |a Norwood : |b Artech House, |c 2016. | ||
| 300 | |a 1 online resource (297 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 505 | 0 | |a Spin Transfer Torque Based Devices, Circuits, and Memory; Contents; Preface; 1Introduction to Magnetic Memories and STT; 1.1Electron Spin and FM Materials: Some Basic Concepts; 1.1.1Magnetic Moment of a Single Electron; 1.1.2Magnetization, Spin Polarization, and Spin Filtering; 1.1.3Electrical Spin Injection; 1.2Spin Valve and GMR Effect; 1.3Vector Spin Polarization; 1.4 Theory of Magnetization Dynamics; 1.4.1Gyromagnetic Precession; 1.4.2Damping; 1.4.3Landau-Lifschitz-Gibert Equation; 1.5STT and LLGS Equation; 1.5.1Direction of STT; 1.5.2Magnitude of STT. | |
| 505 | 8 | |a 1.5.3STT in Magnetic Multilayers and Spin Torque Efficiency1.5.4Overview of Internal fields; Summary; References; 2MTJs; 2.1Thin Film Magnetism: In-Plane and Perpendicular Magnetic Anisotropy; 2.2MTJ Architecture and Operation; 2.2.1Precessional Switching (PS); 2.2.2Thermally Assisted Switching (TAS){AU: previously the acronym TSA was "temperature-assisted switch. | |
| 520 | |a This first-of-its-kind resource is completely dedicated to spin transfer torque (STT) based devices, circuits, and memory. A wide range of topics including, STT MRAMs, MTJ based logic circuits, simulation and modeling strategies, fabrication of MTJ CMOS circuits, non-volatile computing with STT MRAMs, all spin logic, and spin information processing are explored. State-of-the-art modeling and simulation strategies of spin transfer torque based devices and circuits in a lucid manner are covered. Professional engineers find practical guidance in the development of micro-magnetic models of spin-torque based devices in object-oriented micro-magnetic framework (OOMMF) and compact modeling of STT based magnetic tunnel junctions in Verilog-A. The performance parameters and design aspects of STT MRAMs and MTJ based hybrid spintronic CMOS circuits are covered and case studies are presented demonstrating STT-MRAM design and simulation with a detailed analysis of results. The fundamental physics of STT based devices are presented with an emphasis on new advancements from recent years. Advanced topics are also explored including, micromagnetic simulations, multi-level STT MRAMs, giant spin Hall Effect (GSHE) based MRAMs, non-volatile computing, all spin logic and all spin information processing. | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Spintronics. | |
| 650 | 6 | |a Électronique de spin. | |
| 650 | 7 | |a Spintronics |2 fast | |
| 700 | 1 | |a Verma, Shivam. | |
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