Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO : Application to Displays /

Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Yamazaki, Shunpei (Editor ), Tsutsui, Tetsuo (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: [United Kingdom] : Wiley, 2016.
Edición:1st
Temas:
Semiconductors > Materials.
Semiconductors > Characterization.
Gallium compounds.
Electroluminescent display systems > Materials.
Semi-conducteurs > Matériaux.
Semi-conducteurs > Caractérisation.
Gallium > Composés.
Affichage par électroluminescence > Matériaux.
Gallium compounds
Semiconductors > Characterization
Semiconductors > Materials
Zinc compounds
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Intro
  • Title Page
  • Copyright Page
  • Contents
  • About the Editors
  • List of Contributors
  • Series Editor's Foreword
  • Preface
  • Acknowledgments
  • Chapter 1 Introduction
  • 1.1 History of Displays
  • 1.2 Requirement for Displays
  • 1.3 Transistor Technology for Displays
  • 1.3.1 Comparison of Silicon and Oxide Semiconductors
  • 1.3.2 FETs in LCDs
  • 1.3.3 FETs in OLED Displays
  • 1.3.4 Recent FET Technologies
  • 1.3.5 Development of OLED Displays
  • References
  • Chapter 2 Applications of CAAC-IGZO FETs to Displays
  • 2.1 Introduction
  • 2.2 Bottom-Gate Top-Contact FET
  • 2.2.1 Manufacturing Process for CAAC-IGZO FETs with C.E.-Type BGTC Structure
  • 2.2.2 GI Formation
  • 2.2.3 Formation of Buried Channel by Stacked Active Layer
  • 2.2.4 Baking Treatment of CAAC-IGZO
  • 2.2.5 Damaged Layer (n-Type) Formed by Deposition of S/D Electrodes
  • 2.2.6 Cleaning of the Back Channel
  • 2.2.7 Copper Wiring for S/D Electrodes
  • 2.3 Top-Gate Self-Aligned FET
  • 2.3.1 Fabrication Process of TGSA CAAC-IGZO FETs
  • 2.3.2 Formation of GE/GI Patterns
  • 2.3.3 Formation of S/D Regions
  • 2.3.4 GI Thinning and L Reduction
  • 2.4 Characteristics of CAAC-IGZO FET
  • 2.4.1 Current Drivability
  • 2.4.2 Low Off-State Current
  • 2.4.3 Normally-Off Id-Vg Characteristics and Small Threshold-Voltage Variation
  • 2.4.4 Saturability of Id-Vd Characteristics
  • 2.4.5 Summary
  • 2.5 Density of States and Device Reliability
  • 2.5.1 Introduction
  • 2.5.2 Measurement of Defect States in IGZO Film
  • 2.5.3 Correlation between Oxygen Vacancies and FET Characteristics
  • 2.5.4 Defect States in Silicon-Oxide Film
  • 2.5.5 NBITS Mechanism
  • 2.5.6 Summary
  • 2.6 Oxide Conductor Electrode Process
  • 2.6.1 Introduction
  • 2.6.2 Method of Fabricating Oxide Conductor Electrode and Measurements of its Resistivity
  • 2.6.3 LCD Device with Oxide Conductor Electrode
  • 2.6.4 Summary.
  • 6.2 Technology for Higher Resolution
  • 6.2.1 Introduction
  • 6.2.2 The Pixel Circuit
  • 6.2.3 Pixel Layout and Aperture Ratio of an LCD
  • 6.2.4 Applicability of Large-Sized Displays
  • 6.3 Driving Method for Power Saving
  • 6.3.1 Introduction
  • 6.3.2 Saving Power with Low-Frequency Driving
  • 6.3.3 Low-Frequency Driving with CAAC-IGZO
  • 6.3.4 Configuration of a Liquid Crystal Cell for Low-Frequency Driving
  • 6.3.5 Conclusions
  • 6.4 Characteristics of LCDs
  • 6.4.1 Introduction
  • 6.4.2 High-Resolution Fringe-Field Switching LCDs
  • 6.4.3 A 434-PPI Reflective LCD
  • References
  • Appendix
  • Unit Prefixes
  • Index
  • Supplemental Images
  • EULA.

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