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Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO : Application to Displays /

Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Yamazaki, Shunpei (Editor ), Tsutsui, Tetsuo (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: [United Kingdom] : Wiley, 2016.
Edición:1st
Temas:
Acceso en línea:Texto completo

MARC

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245 0 0 |a Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO :  |b Application to Displays /  |c Shunpei Yamazaki, Tetsuo Tsutsui. 
250 |a 1st 
264 1 |a [United Kingdom] :  |b Wiley,  |c 2016. 
300 |a 1 online resource (432 pages) 
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505 0 |a Intro -- Title Page -- Copyright Page -- Contents -- About the Editors -- List of Contributors -- Series Editor's Foreword -- Preface -- Acknowledgments -- Chapter 1 Introduction -- 1.1 History of Displays -- 1.2 Requirement for Displays -- 1.3 Transistor Technology for Displays -- 1.3.1 Comparison of Silicon and Oxide Semiconductors -- 1.3.2 FETs in LCDs -- 1.3.3 FETs in OLED Displays -- 1.3.4 Recent FET Technologies -- 1.3.5 Development of OLED Displays -- References -- Chapter 2 Applications of CAAC-IGZO FETs to Displays -- 2.1 Introduction -- 2.2 Bottom-Gate Top-Contact FET -- 2.2.1 Manufacturing Process for CAAC-IGZO FETs with C.E.-Type BGTC Structure -- 2.2.2 GI Formation -- 2.2.3 Formation of Buried Channel by Stacked Active Layer -- 2.2.4 Baking Treatment of CAAC-IGZO -- 2.2.5 Damaged Layer (n-Type) Formed by Deposition of S/D Electrodes -- 2.2.6 Cleaning of the Back Channel -- 2.2.7 Copper Wiring for S/D Electrodes -- 2.3 Top-Gate Self-Aligned FET -- 2.3.1 Fabrication Process of TGSA CAAC-IGZO FETs -- 2.3.2 Formation of GE/GI Patterns -- 2.3.3 Formation of S/D Regions -- 2.3.4 GI Thinning and L Reduction -- 2.4 Characteristics of CAAC-IGZO FET -- 2.4.1 Current Drivability -- 2.4.2 Low Off-State Current -- 2.4.3 Normally-Off Id-Vg Characteristics and Small Threshold-Voltage Variation -- 2.4.4 Saturability of Id-Vd Characteristics -- 2.4.5 Summary -- 2.5 Density of States and Device Reliability -- 2.5.1 Introduction -- 2.5.2 Measurement of Defect States in IGZO Film -- 2.5.3 Correlation between Oxygen Vacancies and FET Characteristics -- 2.5.4 Defect States in Silicon-Oxide Film -- 2.5.5 NBITS Mechanism -- 2.5.6 Summary -- 2.6 Oxide Conductor Electrode Process -- 2.6.1 Introduction -- 2.6.2 Method of Fabricating Oxide Conductor Electrode and Measurements of its Resistivity -- 2.6.3 LCD Device with Oxide Conductor Electrode -- 2.6.4 Summary. 
505 8 |a 6.2 Technology for Higher Resolution -- 6.2.1 Introduction -- 6.2.2 The Pixel Circuit -- 6.2.3 Pixel Layout and Aperture Ratio of an LCD -- 6.2.4 Applicability of Large-Sized Displays -- 6.3 Driving Method for Power Saving -- 6.3.1 Introduction -- 6.3.2 Saving Power with Low-Frequency Driving -- 6.3.3 Low-Frequency Driving with CAAC-IGZO -- 6.3.4 Configuration of a Liquid Crystal Cell for Low-Frequency Driving -- 6.3.5 Conclusions -- 6.4 Characteristics of LCDs -- 6.4.1 Introduction -- 6.4.2 High-Resolution Fringe-Field Switching LCDs -- 6.4.3 A 434-PPI Reflective LCD -- References -- Appendix -- Unit Prefixes -- Index -- Supplemental Images -- EULA. 
590 |a ProQuest Ebook Central  |b Ebook Central Academic Complete 
650 0 |a Semiconductors  |x Materials. 
650 0 |a Semiconductors  |x Characterization. 
650 0 |a Gallium compounds. 
650 0 |a Electroluminescent display systems  |x Materials. 
650 6 |a Semi-conducteurs  |x Matériaux. 
650 6 |a Semi-conducteurs  |x Caractérisation. 
650 6 |a Gallium  |x Composés. 
650 6 |a Affichage par électroluminescence  |x Matériaux. 
650 7 |a Gallium compounds  |2 fast 
650 7 |a Semiconductors  |x Characterization  |2 fast 
650 7 |a Semiconductors  |x Materials  |2 fast 
650 7 |a Zinc compounds  |2 fast 
700 1 |a Yamazaki, Shunpei,  |e editor. 
700 1 |a Tsutsui, Tetsuo,  |e editor. 
758 |i has work:  |a Physics and technology of crystalline oxide semiconductor CAACO (Text)  |1 https://id.oclc.org/worldcat/entity/E39PCFTwY83h6mVBD7fYmvy68C  |4 https://id.oclc.org/worldcat/ontology/hasWork 
776 0 8 |i Print version:  |t Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO.  |b 1st.  |d [United Kingdom] : Wiley, 2016  |z 9781119247340  |z 1119247349  |w (DLC) 2016025860  |w (OCoLC)951506437 
856 4 0 |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=4786296  |z Texto completo 
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