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|a UAMI
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245 |
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|a Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO :
|b Application to Displays /
|c Shunpei Yamazaki, Tetsuo Tsutsui.
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250 |
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|a 1st
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264 |
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1 |
|a [United Kingdom] :
|b Wiley,
|c 2016.
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300 |
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|a 1 online resource (432 pages)
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336 |
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|a text
|b txt
|2 rdacontent
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337 |
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|a computer
|b c
|2 rdamedia
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|a online resource
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|a Intro -- Title Page -- Copyright Page -- Contents -- About the Editors -- List of Contributors -- Series Editor's Foreword -- Preface -- Acknowledgments -- Chapter 1 Introduction -- 1.1 History of Displays -- 1.2 Requirement for Displays -- 1.3 Transistor Technology for Displays -- 1.3.1 Comparison of Silicon and Oxide Semiconductors -- 1.3.2 FETs in LCDs -- 1.3.3 FETs in OLED Displays -- 1.3.4 Recent FET Technologies -- 1.3.5 Development of OLED Displays -- References -- Chapter 2 Applications of CAAC-IGZO FETs to Displays -- 2.1 Introduction -- 2.2 Bottom-Gate Top-Contact FET -- 2.2.1 Manufacturing Process for CAAC-IGZO FETs with C.E.-Type BGTC Structure -- 2.2.2 GI Formation -- 2.2.3 Formation of Buried Channel by Stacked Active Layer -- 2.2.4 Baking Treatment of CAAC-IGZO -- 2.2.5 Damaged Layer (n-Type) Formed by Deposition of S/D Electrodes -- 2.2.6 Cleaning of the Back Channel -- 2.2.7 Copper Wiring for S/D Electrodes -- 2.3 Top-Gate Self-Aligned FET -- 2.3.1 Fabrication Process of TGSA CAAC-IGZO FETs -- 2.3.2 Formation of GE/GI Patterns -- 2.3.3 Formation of S/D Regions -- 2.3.4 GI Thinning and L Reduction -- 2.4 Characteristics of CAAC-IGZO FET -- 2.4.1 Current Drivability -- 2.4.2 Low Off-State Current -- 2.4.3 Normally-Off Id-Vg Characteristics and Small Threshold-Voltage Variation -- 2.4.4 Saturability of Id-Vd Characteristics -- 2.4.5 Summary -- 2.5 Density of States and Device Reliability -- 2.5.1 Introduction -- 2.5.2 Measurement of Defect States in IGZO Film -- 2.5.3 Correlation between Oxygen Vacancies and FET Characteristics -- 2.5.4 Defect States in Silicon-Oxide Film -- 2.5.5 NBITS Mechanism -- 2.5.6 Summary -- 2.6 Oxide Conductor Electrode Process -- 2.6.1 Introduction -- 2.6.2 Method of Fabricating Oxide Conductor Electrode and Measurements of its Resistivity -- 2.6.3 LCD Device with Oxide Conductor Electrode -- 2.6.4 Summary.
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|a 6.2 Technology for Higher Resolution -- 6.2.1 Introduction -- 6.2.2 The Pixel Circuit -- 6.2.3 Pixel Layout and Aperture Ratio of an LCD -- 6.2.4 Applicability of Large-Sized Displays -- 6.3 Driving Method for Power Saving -- 6.3.1 Introduction -- 6.3.2 Saving Power with Low-Frequency Driving -- 6.3.3 Low-Frequency Driving with CAAC-IGZO -- 6.3.4 Configuration of a Liquid Crystal Cell for Low-Frequency Driving -- 6.3.5 Conclusions -- 6.4 Characteristics of LCDs -- 6.4.1 Introduction -- 6.4.2 High-Resolution Fringe-Field Switching LCDs -- 6.4.3 A 434-PPI Reflective LCD -- References -- Appendix -- Unit Prefixes -- Index -- Supplemental Images -- EULA.
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590 |
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|a ProQuest Ebook Central
|b Ebook Central Academic Complete
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650 |
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0 |
|a Semiconductors
|x Materials.
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650 |
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|a Semiconductors
|x Characterization.
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650 |
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|a Gallium compounds.
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650 |
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|a Electroluminescent display systems
|x Materials.
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650 |
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|a Semi-conducteurs
|x Matériaux.
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650 |
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|a Semi-conducteurs
|x Caractérisation.
|
650 |
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6 |
|a Gallium
|x Composés.
|
650 |
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6 |
|a Affichage par électroluminescence
|x Matériaux.
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|
7 |
|a Gallium compounds
|2 fast
|
650 |
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|a Semiconductors
|x Characterization
|2 fast
|
650 |
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|a Semiconductors
|x Materials
|2 fast
|
650 |
|
7 |
|a Zinc compounds
|2 fast
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700 |
1 |
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|a Yamazaki, Shunpei,
|e editor.
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700 |
1 |
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|a Tsutsui, Tetsuo,
|e editor.
|
758 |
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|i has work:
|a Physics and technology of crystalline oxide semiconductor CAACO (Text)
|1 https://id.oclc.org/worldcat/entity/E39PCFTwY83h6mVBD7fYmvy68C
|4 https://id.oclc.org/worldcat/ontology/hasWork
|
776 |
0 |
8 |
|i Print version:
|t Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO.
|b 1st.
|d [United Kingdom] : Wiley, 2016
|z 9781119247340
|z 1119247349
|w (DLC) 2016025860
|w (OCoLC)951506437
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856 |
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