Cargando…
Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO : Application to LSI /
Describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Somerset :
Wiley,
2016.
|
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Title Page ; Copyright; Contents; About the Editors; List of Contributors ; Series Editor's Foreword ; Preface; Acknowledgments; Chapter 1 Introduction; 1.1 Overview of this Book; 1.2 Background; 1.2.1 Typical Characteristics of CAAC-IGZO FETs; 1.2.2 Possible Applications of CAAC-IGZO FETs; 1.3 Summary of Each Chapter; References; Chapter 2 Device Physics of CAAC-IGZO FET ; 2.1 Introduction; 2.2 Off-State Current; 2.2.1 Off-State Current Comparison between Si and CAAC-IGZO FETs; 2.2.2 Measurement of Extremely Low Off-State Current; 2.2.3 Theoretical Discussion with Energy Band Diagram.
- 2.2.4 Conclusion2.3 Subthreshold Characteristics; 2.3.1 Estimation of Icut by SS; 2.3.2 Extraction Method of Interface Levels; 2.3.3 Reproduction of Measured Value and Estimation of Icut; 2.3.4 Conclusion; 2.4 Technique for Controlling Threshold Voltage (Vth); 2.4.1 Vth Control by Application of Back-Gate Bias; 2.4.2 Vth Control by Formation of Circuit for Retaining Back-Gate Bias; 2.4.3 Vth Control by Charge Injection into the Charge Trap Layer; 2.4.4 Conclusion; 2.5 On-State Characteristics; 2.5.1 Channel-Length Dependence of Field-Effect Mobility; 2.5.2 Measurement of Cut-off Frequency.
- 2.5.3 Summary2.6 Short-Channel Effect; 2.6.1 Features of S-ch CAAC-IGZO FETs; 2.6.2 Effect of S-ch Structure; 2.6.3 Intrinsic Accumulation-Mode Device; 2.6.4 Dielectric Anisotropy; 2.6.5 Numerical Calculation of the Band Diagrams in IGZO FETs; 2.6.6 Summary; 2.7 20-nm-Node CAAC-IGZO FET; 2.7.1 TGSA CAAC-IGZO FET; 2.7.2 Device Characteristics; 2.7.3 Memory-Retention Characteristics; 2.7.4 Summary; 2.8 Hybrid Structure; 2.8.1 TGTC Structure; 2.8.2 TGSA Structure; 2.8.3 Hybrid Structure; Appendix: Comparison between CAAC-IGZO and Si; References; Chapter 3 NOSRAM ; 3.1 Introduction.
- 3.2 Memory Characteristics3.3 Application of CAAC-IGZO FETs to Memory and their Operation; 3.4 Configuration and Operation of NOSRAM Module; 3.4.1 NOSRAM Module; 3.4.2 Setting Operational Voltage of NOSRAM Module; 3.4.3 Operation of NOSRAM Module; 3.5 Multilevel NOSRAM; 3.5.1 4-Level (2 Bits/Cell) NOSRAM Module; 3.5.2 8-Level (3 Bits/Cell) NOSRAM Module; 3.5.3 16-Level (4 Bits/Cell) NOSRAM Module; 3.5.4 Stacked Multilevel NOSRAM; 3.6 Prototype and Characterization; 3.6.1 2-Level NOSRAM; 3.6.2 4-Level NOSRAM; 3.6.3 8-Level NOSRAM; 3.6.4 16-Level NOSRAM; 3.6.5 Comparison of Prototypes.